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NTB18N06LT4G-VB Product details
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Product Introduction: NTB18N06LT4G-VB
NTB18N06LT4G-VB is a high-performance N-channel MOSFET in TO263 package, designed for low-medium voltage and medium current applications. Its design goal is to provide low on-resistance and low threshold voltage to achieve excellent power management performance. Using Trench technology, NTB18N06LT4G-VB can reduce switching losses in high-frequency operation, ensuring high efficiency and stability of the system.
NTB18N06LT4G-VB is a high-performance N-channel MOSFET in TO263 package, designed for low-medium voltage and medium current applications. Its design goal is to provide low on-resistance and low threshold voltage to achieve excellent power management performance. Using Trench technology, NTB18N06LT4G-VB can reduce switching losses in high-frequency operation, ensuring high efficiency and stability of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Model**: NTB18N06LT4G-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
- **Model**: NTB18N06LT4G-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Application areas and module examples:
1. **Power converter**:
NTB18N06LT4G-VB is widely used in switching power supplies and DC-DC converters, which can effectively manage current and voltage, reduce energy loss, and improve overall system efficiency.
2. **Motor drive**:
In the field of motor control, this MOSFET can efficiently control the start and stop and speed regulation of the motor, and is suitable for power tools and industrial automation equipment to ensure reliable performance.
3. **Battery management system**:
NTB18N06LT4G-VB optimizes the charging and discharging process in the battery management system (BMS), improves battery safety and performance, and ensures stable system operation.
4. **Automotive electronics**:
This MOSFET can be used in automotive electronics to support power distribution and motor control, and improve the energy efficiency and reliability of automotive electrical systems.
5. **LED drive circuit**:
NTB18N06LT4G-VB performs well in LED drive applications, can achieve efficient dimming, meet a variety of lighting needs, and improve the overall performance of the system.
With its excellent design and performance, NTB18N06LT4G-VB is an ideal choice for multiple high-performance applications.
1. **Power converter**:
NTB18N06LT4G-VB is widely used in switching power supplies and DC-DC converters, which can effectively manage current and voltage, reduce energy loss, and improve overall system efficiency.
2. **Motor drive**:
In the field of motor control, this MOSFET can efficiently control the start and stop and speed regulation of the motor, and is suitable for power tools and industrial automation equipment to ensure reliable performance.
3. **Battery management system**:
NTB18N06LT4G-VB optimizes the charging and discharging process in the battery management system (BMS), improves battery safety and performance, and ensures stable system operation.
4. **Automotive electronics**:
This MOSFET can be used in automotive electronics to support power distribution and motor control, and improve the energy efficiency and reliability of automotive electrical systems.
5. **LED drive circuit**:
NTB18N06LT4G-VB performs well in LED drive applications, can achieve efficient dimming, meet a variety of lighting needs, and improve the overall performance of the system.
With its excellent design and performance, NTB18N06LT4G-VB is an ideal choice for multiple high-performance applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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