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NTB13N10T4G-VB Product details
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Product Introduction
NTB13N10T4G-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) can reach 100V, and the drain current (ID) is 20A, which can meet a variety of power and switch management needs. The device has a low on-resistance (RDS(ON) of 100mΩ@VGS=10V), which makes it perform well in high-efficiency power conversion and switch control, and can effectively reduce power consumption and improve system efficiency.
NTB13N10T4G-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) can reach 100V, and the drain current (ID) is 20A, which can meet a variety of power and switch management needs. The device has a low on-resistance (RDS(ON) of 100mΩ@VGS=10V), which makes it perform well in high-efficiency power conversion and switch control, and can effectively reduce power consumption and improve system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **VDS**: 100V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 100mΩ@VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **VDS**: 100V
- **VGS**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 100mΩ@VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Trench
Domain and module applications：
Applications and modules
NTB13N10T4G-VB is widely used in many fields, including power management, industrial control and automotive electronics. Specific application examples are as follows:
- **Power converter**: In high-voltage DC-DC converters, this MOSFET can be used as a switching element to improve conversion efficiency and reduce power consumption, suitable for power adapters and battery chargers.
- **Switching power supply**: In switching power supply modules, NTB13N10T4G can switch quickly, improve the dynamic response capability of the system, and is widely used in power supply for computers and communication equipment.
- **Motor drive**: Suitable for motor control systems, it can effectively control the start and stop and speed regulation of motors, and improve the performance of industrial automation equipment.
- **Automotive electronics**: In automotive power management systems, this MOSFET can be used for power distribution and battery management, improve vehicle energy efficiency, and support smarter automotive applications.
NTB13N10T4G-VB is widely used in many fields, including power management, industrial control and automotive electronics. Specific application examples are as follows:
- **Power converter**: In high-voltage DC-DC converters, this MOSFET can be used as a switching element to improve conversion efficiency and reduce power consumption, suitable for power adapters and battery chargers.
- **Switching power supply**: In switching power supply modules, NTB13N10T4G can switch quickly, improve the dynamic response capability of the system, and is widely used in power supply for computers and communication equipment.
- **Motor drive**: Suitable for motor control systems, it can effectively control the start and stop and speed regulation of motors, and improve the performance of industrial automation equipment.
- **Automotive electronics**: In automotive power management systems, this MOSFET can be used for power distribution and battery management, improve vehicle energy efficiency, and support smarter automotive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
