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NTB13N10G-VB Product details

Product introduction:

NTB13N10G-VB Product Introduction
NTB13N10G-VB is a high-efficiency unipolar N-type MOSFET in TO263 package, suitable for high voltage and high current applications. The device has excellent conduction performance and fast switching capability, and is particularly suitable for power management systems that require high efficiency and low heat, and can effectively improve the overall performance of the circuit.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 100V 1.8V 20A 100mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 100V 1.8V 20A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 100V 1.8V 20A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N type
- **VDS**: 100V
- **VGS**: ±20V
- **Vth**: 1.8V
- **RDS(ON)**: 100mΩ@VGS=10V
- **ID**: 20A
- **Technology**: Trench

Domain and module applications:

Application fields and modules: NTB13N10G-VB can be widely used in power conversion, DC-DC converters and motor drive modules. Its high withstand voltage and low on-resistance make it suitable for solar inverters, electric vehicles and industrial automation systems. In addition, this MOSFET is also suitable for power management of consumer electronics to meet the needs of high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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