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NTB125N02RT4-VB Product details
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Product Introduction
NTB125N02RT4-VB is a high-performance N-channel MOSFET packaged in TO263, with excellent conduction performance and high current carrying capacity, suitable for a variety of power management and switching applications.
NTB125N02RT4-VB is a high-performance N-channel MOSFET packaged in TO263, with excellent conduction performance and high current carrying capacity, suitable for a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 3.2mΩ@VGS=4.5V, 2.3mΩ@VGS=10V
- **Continuous leakage current (ID)**: 150A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 3.2mΩ@VGS=4.5V, 2.3mΩ@VGS=10V
- **Continuous leakage current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules: This MOSFET is widely used in high-efficiency power converters, DC-DC converters, and motor drive circuits. It is particularly suitable for applications that require high current and low conduction losses, such as battery management systems and power adapters. In addition, it can also be used in switching power supplies and LED driver modules in consumer electronics to improve overall energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
