NTB125N02RT4G-VB Product details
Product introduction:
NTB125N02RT4G-VB is a high-efficiency single N-channel MOSFET in TO263 package, designed for low voltage and high current applications. Its VDS rating of 30V, combined with extremely low on-resistance, makes it an excellent performer in power management and drive circuits, suitable for high-efficiency and compact design requirements.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS**: 30V
- **VGS**: ±20V
- **Vth**: 1.7V
- **RDS(ON)**: 3.2mΩ@VGS=4.5V, 2.3mΩ@VGS=10V
- **ID**: 150A
- **Technology**: Trench
Domain and module applications:
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