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NP90N04VLG-E1-AY-VB Product details
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Product Introduction
NP90N04VLG-E1-AY-VB is a high-efficiency single N-channel MOSFET in TO252 package, designed for medium voltage and high current applications. With a drain-source voltage (VDS) of 40V and ultra-low on-resistance, the device is suitable for use in circuits requiring high efficiency and low power consumption, especially in high load and high frequency environments.
NP90N04VLG-E1-AY-VB is a high-efficiency single N-channel MOSFET in TO252 package, designed for medium voltage and high current applications. With a drain-source voltage (VDS) of 40V and ultra-low on-resistance, the device is suitable for use in circuits requiring high efficiency and low power consumption, especially in high load and high frequency environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 85A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 85A
- **Technology**: Trench
Domain and module applications：
Application fields and modules: NP90N04VLG-E1-AY-VB is widely used in power management, DC-DC converters, motor drives, inverters and other fields. Its low on-resistance characteristics make it perform well in high-frequency switching power supplies, which can significantly improve the energy efficiency of the system and reduce heat generation. In addition, this MOSFET is also suitable for consumer electronics, automotive electronics and industrial control modules to ensure stability and reliability under high load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
