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NP90N04PDH-VB Product details

Product introduction:

NP90N04PDH-VB Product Introduction
NP90N04PDH-VB is a high-efficiency unipolar N-channel MOSFET in TO263 package, designed for high current and low conduction loss applications. The superior electrical characteristics and high reliability of this device make it very suitable for efficient operation in various power management and control systems, and can meet demanding application requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 40V 3V 150A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 40V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 40V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2.5mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 2mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench

Domain and module applications:

Applications and module examples
NP90N04PDH-VB is widely used in power conversion, DC-DC converters and motor drives. Its high conductivity and low on-resistance make it very suitable for power control systems in electric vehicles, enabling fast response and high efficiency. In addition, this MOSFET is also suitable for high-frequency switching power supplies, server power management, and industrial automation equipment to achieve efficient energy conversion and optimized thermal management. Its excellent performance ensures excellent performance in a variety of high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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