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NP86N04NHE-VB Product details
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Product Introduction
NP86N04NHE-VB is a high-performance single N-channel MOSFET in TO262 package, designed for medium voltage and high current applications. With a drain-source voltage (VDS) of 40V and very low on-resistance, the device can perform well in circuits requiring high efficiency and low power consumption, and is suitable for high load and high frequency environments.
NP86N04NHE-VB is a high-performance single N-channel MOSFET in TO262 package, designed for medium voltage and high current applications. With a drain-source voltage (VDS) of 40V and very low on-resistance, the device can perform well in circuits requiring high efficiency and low power consumption, and is suitable for high load and high frequency environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Application fields and modules: NP86N04NHE-VB is widely used in power management, DC-DC converters, motor drives and inverters. Its low on-resistance makes it excellent in high-frequency switching power supplies, effectively improving energy efficiency and reducing heat loss. In addition, this MOSFET is also suitable for use in consumer electronics, automotive electronics and industrial control modules to ensure reliability and stability under high load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
