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NP82P04PLF-VB Product details
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Product Introduction
NP82P04PLF-VB is a high-performance single P-channel MOSFET in TO263 package, designed for negative voltage and high current applications. With a drain-source voltage (VDS) of -40V and extremely low on-resistance, the device is suitable for use in circuits requiring high efficiency and low power consumption, especially in reverse load conditions.
NP82P04PLF-VB is a high-performance single P-channel MOSFET in TO263 package, designed for negative voltage and high current applications. With a drain-source voltage (VDS) of -40V and extremely low on-resistance, the device is suitable for use in circuits requiring high efficiency and low power consumption, especially in reverse load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | 4.1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 8.28mΩ @ VGS = 4.5V
- 4.1mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -110A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 8.28mΩ @ VGS = 4.5V
- 4.1mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -110A
- **Technology**: Trench
Domain and module applications：
Application fields and modules: NP82P04PLF-VB is widely used in power management, DC-DC converters, load switches and motor drives. Its low on-resistance makes it perform well in high-frequency switching power supplies, which can significantly improve energy efficiency and reduce heat loss. In addition, this MOSFET is also suitable for use in automotive electronics and industrial control modules to ensure reliability and stability under high load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
