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NP82N04NUG-S18-AY-VB Product details
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Product Introduction
NP82N04NUG-S18-AY-VB is a high-efficiency single N-channel MOSFET in a TO262 package designed for medium voltage and high current applications. The device has a drain-source voltage (VDS) of 40V, combined with a low on-resistance, making it an excellent performer in circuits requiring high efficiency and low power consumption, making it ideal for high load applications.
NP82N04NUG-S18-AY-VB is a high-efficiency single N-channel MOSFET in a TO262 package designed for medium voltage and high current applications. The device has a drain-source voltage (VDS) of 40V, combined with a low on-resistance, making it an excellent performer in circuits requiring high efficiency and low power consumption, making it ideal for high load applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Application fields and modules: NP82N04NUG-S18-AY-VB is widely used in power management, DC-DC converters, motor drives and inverters. Its low on-resistance makes it superior in high-frequency switching power supplies, effectively improving energy efficiency and reducing heat loss. In addition, this MOSFET is suitable for use in consumer electronics, automotive electronics and industrial automation modules to ensure stability and reliability under high load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
