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NP80N06NLG-VB Product details
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Product Introduction
NP80N06NLG-VB is a high-performance single N-channel MOSFET in TO262 package, designed for medium voltage and high current applications. The device has a drain-source voltage (VDS) of 60V and an extremely low on-resistance, making it an excellent choice for circuits that require high efficiency and low power consumption, and is suitable for use in high load and high frequency environments.
NP80N06NLG-VB is a high-performance single N-channel MOSFET in TO262 package, designed for medium voltage and high current applications. The device has a drain-source voltage (VDS) of 60V and an extremely low on-resistance, making it an excellent choice for circuits that require high efficiency and low power consumption, and is suitable for use in high load and high frequency environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 120A
- **Technology**: Trench
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Application fields and modules: NP80N06NLG-VB is widely used in power management, DC-DC converters, motor drives and inverters. Its low on-resistance makes it perform well in high-frequency switching power supplies, which can effectively improve energy efficiency and reduce heat loss. In addition, this MOSFET is also suitable for use in consumer electronics, automotive electronics and industrial automation modules to ensure stability and reliability under high load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
