中文
English
NP80N055NDG-VB Product details
Back to previous pageProduct introduction：
NP80N055NDG-VB Product Introduction
NP80N055NDG-VB is a high-efficiency unipolar N-channel MOSFET in TO262 package, designed to provide excellent current carrying capacity and low conduction loss. This product has excellent switching characteristics and thermal stability, and is particularly suitable for applications requiring high current and high efficiency.
NP80N055NDG-VB is a high-efficiency unipolar N-channel MOSFET in TO262 package, designed to provide excellent current carrying capacity and low conduction loss. This product has excellent switching characteristics and thermal stability, and is particularly suitable for applications requiring high current and high efficiency.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package**: TO262
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 120A
- **Technology**: Trench
- **Package**: TO262
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
NP80N055NDG-VB is widely used in power management and high power applications such as DC-DC converters, inverters and motor drive modules. It is particularly suitable for the power system of electric vehicles, providing fast switching and low energy loss, thereby improving system efficiency. In addition, this MOSFET can also be used in industrial automation and high-frequency switching power supplies to meet high load and high efficiency requirements.
NP80N055NDG-VB is widely used in power management and high power applications such as DC-DC converters, inverters and motor drive modules. It is particularly suitable for the power system of electric vehicles, providing fast switching and low energy loss, thereby improving system efficiency. In addition, this MOSFET can also be used in industrial automation and high-frequency switching power supplies to meet high load and high efficiency requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
