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NP80N04NHE-VB Product details
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Product Introduction
NP80N04NHE-VB is a high-performance single N-channel MOSFET in TO262 package, designed for medium voltage and high current applications. Its drain-source voltage (VDS) can reach 40V and has low on-resistance, making it excellent in circuits requiring high efficiency and low power consumption, and suitable for use in various harsh environments.
NP80N04NHE-VB is a high-performance single N-channel MOSFET in TO262 package, designed for medium voltage and high current applications. Its drain-source voltage (VDS) can reach 40V and has low on-resistance, making it excellent in circuits requiring high efficiency and low power consumption, and suitable for use in various harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Application fields and modules: NP80N04NHE-VB is widely used in power management, DC-DC converters, motor drives and inverters. Its low on-resistance makes it excel in high-frequency switching power supplies, improving energy efficiency and reducing heat loss. In addition, this MOSFET is also suitable for use in modules such as automotive electronics and industrial control, ensuring stability and reliability under high load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
