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NP80N03NDE-VB Product details

Product introduction:

NP80N03NDE-VB Product Introduction
NP80N03NDE-VB is a high-efficiency unipolar N-type MOSFET in TO262 package, designed for high power and high frequency applications. Its excellent low on-resistance and high current carrying capacity make it very suitable for power management and switch control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO262 Single-N 30V 1.7V 90A 4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO262 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO262 Single-N 30V 1.7V 90A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO262 Single-N 30V 1.7V 90A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO262 Single-N
Detailed parameter description
- **Package**: TO262
- **Configuration**: Single N type
- **VDS**: 30V
- **VGS**: ±20V
- **Vth**: 1.7V
- **RDS(ON)**: 7mΩ@VGS=4.5V; 4mΩ@VGS=10V
- **ID**: 90A
- **Technology**: Trench

Domain and module applications:

Application fields and modules: This MOSFET is widely used in power conversion, DC-DC converters, motor control and other modules. Due to its low on-resistance and high current handling capability, the NP80N03NDE-VB is very suitable for high-efficiency power management systems such as portable devices and consumer electronics to optimize energy utilization. In addition, it can also provide reliable performance in applications such as industrial automation and electric vehicles, helping to achieve higher energy efficiency and system reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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