中文
English
NP80N03KDE-VB Product details
Back to previous pageProduct introduction：
Product Introduction
NP80N03KDE-VB is a high-performance single N-channel MOSFET in TO263 package, designed for medium voltage and high current applications. Its drain-source voltage (VDS) is 30V and has extremely low on-resistance, making it suitable for use in circuits requiring high efficiency and low power consumption. It is an excellent switching device.
NP80N03KDE-VB is a high-performance single N-channel MOSFET in TO263 package, designed for medium voltage and high current applications. Its drain-source voltage (VDS) is 30V and has extremely low on-resistance, making it suitable for use in circuits requiring high efficiency and low power consumption. It is an excellent switching device.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 98A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 98A
- **Technology**: Trench
Domain and module applications：
Application fields and modules: NP80N03KDE-VB is widely used in power management, DC-DC converters, motor drives, LED drive circuits and other fields. Its low on-resistance characteristics make it have superior performance in high-frequency switching power supplies, which can effectively improve energy efficiency and reduce heat loss. In addition, this MOSFET is also widely used in consumer electronics, automotive electronics and industrial automation modules to ensure stability and reliability under high load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
