中文
English
NP80N03KDE-E1-VB Product details
Back to previous pageProduct introduction：
NP80N03KDE-E1-VB Product Introduction
NP80N03KDE-E1-VB is a high-performance N-channel MOSFET in TO263 package, designed for low voltage and high current applications. With its extremely low on-resistance and excellent current handling capability, this device is very suitable for use in electronic devices requiring high efficiency and high reliability, and is widely used in power management and electric vehicles.
NP80N03KDE-E1-VB is a high-performance N-channel MOSFET in TO263 package, designed for low voltage and high current applications. With its extremely low on-resistance and excellent current handling capability, this device is very suitable for use in electronic devices requiring high efficiency and high reliability, and is widely used in power management and electric vehicles.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
NP80N03KDE-E1-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: In switching power supplies and DC-DC converters, as an efficient power switch, it can achieve excellent current control, improve energy conversion efficiency and reduce energy loss.
2. **Electric vehicles**: As a key component of electric vehicle power systems, it supports high current output and ensures stable performance of electric vehicles under various conditions.
3. **Motor control**: Widely used in industrial automation and robotic systems, as a core component of motor drive circuits, it provides fast response and efficient power supply.
4. **Consumer electronics**: In smart home appliances and mobile devices, it provides efficient power solutions to support product energy efficiency and reliability.
5. **Renewable energy systems**: Suitable for solar inverters and other renewable energy devices, ensuring efficient energy management and conversion, and improving the overall performance of the system.
With these features, NP80N03KDE-E1-VB MOSFET plays an important role in modern electronic design and can meet various application requirements of high performance and high reliability.
NP80N03KDE-E1-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: In switching power supplies and DC-DC converters, as an efficient power switch, it can achieve excellent current control, improve energy conversion efficiency and reduce energy loss.
2. **Electric vehicles**: As a key component of electric vehicle power systems, it supports high current output and ensures stable performance of electric vehicles under various conditions.
3. **Motor control**: Widely used in industrial automation and robotic systems, as a core component of motor drive circuits, it provides fast response and efficient power supply.
4. **Consumer electronics**: In smart home appliances and mobile devices, it provides efficient power solutions to support product energy efficiency and reliability.
5. **Renewable energy systems**: Suitable for solar inverters and other renewable energy devices, ensuring efficient energy management and conversion, and improving the overall performance of the system.
With these features, NP80N03KDE-E1-VB MOSFET plays an important role in modern electronic design and can meet various application requirements of high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
