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NP55N055SUG-E1-AY-VB Product details
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Product Introduction
NP55N055SUG-E1-AY-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. Its drain-source voltage (VDS) can reach 60V, and its low on-resistance makes it perform well in high-efficiency and low-power circuits, especially suitable for applications that need to save space.
NP55N055SUG-E1-AY-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. Its drain-source voltage (VDS) can reach 60V, and its low on-resistance makes it perform well in high-efficiency and low-power circuits, especially suitable for applications that need to save space.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 58A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 58A
- **Technology**: Trench
Domain and module applications：
Application fields and modules: NP55N055SUG-E1-AY-VB is widely used in power management, DC-DC converters, inverters, motor drives and other fields. Its low on-resistance characteristics make it particularly effective in high-frequency switching power supplies, which can improve overall energy efficiency and reduce heat generation. In addition, this MOSFET is also widely used in consumer electronics, automotive electronics and industrial automation modules to ensure stability and reliability under high loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
