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NP55N04SUG-E1-AY-VB Product details
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NP55N04SUG-E1-AY-VB Product Introduction
NP55N04SUG-E1-AY-VB is a high-performance unipolar N-type MOSFET packaged in TO252, designed to meet the needs of high current and low voltage applications. Its extremely low on-resistance and excellent current carrying capacity make it very suitable for a variety of high-efficiency power management solutions.
NP55N04SUG-E1-AY-VB is a high-performance unipolar N-type MOSFET packaged in TO252, designed to meet the needs of high current and low voltage applications. Its extremely low on-resistance and excellent current carrying capacity make it very suitable for a variety of high-efficiency power management solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-type channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ (VGS=4.5V)
- 5mΩ (VGS=10V)
- **Maximum leakage current (ID)**: 85A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-type channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ (VGS=4.5V)
- 5mΩ (VGS=10V)
- **Maximum leakage current (ID)**: 85A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples: NP55N04SUG-E1-AY-VB is suitable for power management, DC-DC converters, motor drives and other fields. It is widely used in switching power supplies (SMPS), high-efficiency power adapters and battery management systems to effectively improve energy conversion efficiency. With its low on-resistance, this MOSFET can significantly reduce energy loss and meet the needs of modern electronic devices for high performance and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
