中文
English
NP55N03SUG-E1-AY-VB Product details
Back to previous pageProduct introduction：
NP55N03SUG-E1-AY-VB Product Introduction
NP55N03SUG-E1-AY-VB is a high-efficiency single N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, supports up to 80A of leakage current, has excellent on-resistance, and RDS(ON) is only 5mΩ when VGS is 10V, providing excellent switching performance and energy efficiency. The device is manufactured using Trench technology, ensuring excellent thermal performance and stability, suitable for a variety of power management and control applications.
NP55N03SUG-E1-AY-VB is a high-efficiency single N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, supports up to 80A of leakage current, has excellent on-resistance, and RDS(ON) is only 5mΩ when VGS is 10V, providing excellent switching performance and energy efficiency. The device is manufactured using Trench technology, ensuring excellent thermal performance and stability, suitable for a variety of power management and control applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: NP55N03SUG-E1-AY-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 6mΩ@VGS=4.5V; 5mΩ@VGS=10V
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench
- **Model**: NP55N03SUG-E1-AY-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 6mΩ@VGS=4.5V; 5mΩ@VGS=10V
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Portable devices**: NP55N03SUG-E1-AY-VB is suitable for mobile devices and portable chargers. Due to its high current carrying capacity and low power consumption, it can effectively extend the use time of the device.
2. **Power management module**: In DC-DC converters and power management systems, this MOSFET can achieve efficient current switching to ensure the stability and efficiency of the system under high load.
3. **Electric vehicles**: This model is suitable for the drive system of electric bicycles and electric scooters, providing powerful power output and efficient power control to improve overall performance.
4. **LED driver**: NP55N03SUG-E1-AY-VB is also commonly used in LED driver circuits to achieve efficient power conversion and ensure the brightness and stability of the light source.
Through these examples, we can see the wide applicability of NP55N03SUG-E1-AY-VB in modern electronic applications, helping designers to achieve efficient and reliable circuit design.
1. **Portable devices**: NP55N03SUG-E1-AY-VB is suitable for mobile devices and portable chargers. Due to its high current carrying capacity and low power consumption, it can effectively extend the use time of the device.
2. **Power management module**: In DC-DC converters and power management systems, this MOSFET can achieve efficient current switching to ensure the stability and efficiency of the system under high load.
3. **Electric vehicles**: This model is suitable for the drive system of electric bicycles and electric scooters, providing powerful power output and efficient power control to improve overall performance.
4. **LED driver**: NP55N03SUG-E1-AY-VB is also commonly used in LED driver circuits to achieve efficient power conversion and ensure the brightness and stability of the light source.
Through these examples, we can see the wide applicability of NP55N03SUG-E1-AY-VB in modern electronic applications, helping designers to achieve efficient and reliable circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
