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NP52N06SLG-VB Product details
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Product Introduction
NP52N06SLG-VB is a single N-channel MOSFET in TO252 package, designed for high-efficiency applications. The device has a drain-source voltage (VDS) of 60V and a continuous current (ID) of 58A, combined with advanced Trench technology, which enables it to achieve extremely low on-resistance at low drive voltage. This makes NP52N06SLG-VB particularly suitable for high-frequency and high-efficiency power management and switching applications.
NP52N06SLG-VB is a single N-channel MOSFET in TO252 package, designed for high-efficiency applications. The device has a drain-source voltage (VDS) of 60V and a continuous current (ID) of 58A, combined with advanced Trench technology, which enables it to achieve extremely low on-resistance at low drive voltage. This makes NP52N06SLG-VB particularly suitable for high-frequency and high-efficiency power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 60V
- **VGS**: ±20V
- **Vth**: 2.5V
- **RDS(ON)**: 13mΩ@VGS=4.5V; 10mΩ@VGS=10V
- **ID**: 58A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 60V
- **VGS**: ±20V
- **Vth**: 2.5V
- **RDS(ON)**: 13mΩ@VGS=4.5V; 10mΩ@VGS=10V
- **ID**: 58A
- **Technology**: Trench
Domain and module applications：
Applications and modules
NP52N06SLG-VB can be widely used in many fields, including:
1. **Switching power supply**: In various switching power supply designs, the low on-resistance of this MOSFET can improve system efficiency and reduce heat generation.
2. **Motor drive**: For motor controllers, it can efficiently switch high current loads to ensure fast response and stability of the motor.
3. **Battery management system**: In battery charge and discharge control, it provides efficient switching functions to extend battery life and improve safety.
4. **Consumer electronics**: Suitable for high-power consumer electronics products such as power adapters and audio equipment, providing stable and reliable power output.
NP52N06SLG-VB can be widely used in many fields, including:
1. **Switching power supply**: In various switching power supply designs, the low on-resistance of this MOSFET can improve system efficiency and reduce heat generation.
2. **Motor drive**: For motor controllers, it can efficiently switch high current loads to ensure fast response and stability of the motor.
3. **Battery management system**: In battery charge and discharge control, it provides efficient switching functions to extend battery life and improve safety.
4. **Consumer electronics**: Suitable for high-power consumer electronics products such as power adapters and audio equipment, providing stable and reliable power output.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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