中文
English
NP52N06SLG-E1-AY-VB Product details
Back to previous pageProduct introduction：
Product Introduction
NP52N06SLG-E1-AY-VB is a high-efficiency single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. With a drain-source voltage (VDS) of 60V and excellent on-resistance, the device is suitable for use in circuits requiring high efficiency and low power consumption, especially in space-constrained applications.
NP52N06SLG-E1-AY-VB is a high-efficiency single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. With a drain-source voltage (VDS) of 60V and excellent on-resistance, the device is suitable for use in circuits requiring high efficiency and low power consumption, especially in space-constrained applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 58A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 58A
- **Technology**: Trench
Domain and module applications：
Application fields and modules: NP52N06SLG-E1-AY-VB is suitable for power management, DC-DC converters, inverters and motor drives. Due to its low on-resistance, it can improve efficiency and reduce heat loss in high-frequency switching power supplies. In addition, this MOSFET is also widely used in consumer electronics, automotive electronics and industrial automation modules to ensure stability and reliability under high load conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
