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NP50P04KDG-VB Product details

Product introduction:

NP50P04KDG-VB Product Introduction
NP50P04KDG-VB is a high performance unipolar P-type MOSFET in TO263 package with low on-resistance and high current carrying capacity, suitable for various high power and high frequency applications. It is designed to achieve efficient switch control and power management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-P -40V -2.5V -110A 4.1mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-P -40V -2.5V -110A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-P -40V -2.5V -110A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-P
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single P type
- **VDS**: -40V
- **VGS**: ±20V
- **Vth**: -2.5V
- **RDS(ON)**: 8.28mΩ@VGS=4.5V; 4.1mΩ@VGS=10V
- **ID**: -110A
- **Technology**: Trench

Domain and module applications:

Application fields and modules: This MOSFET is widely used in power conversion, motor drive and load switch modules. Due to its excellent conduction performance, NP50P04KDG-VB is particularly suitable for use in high-efficiency power management systems to effectively reduce energy losses. In addition, it can also be used in portable devices and renewable energy applications such as solar inverters to improve the overall system energy efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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