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NP36P06SLG-E1-AY-VB Product details

Product introduction:

NP36P06SLG-E1-AY-VB Product Introduction
NP36P06SLG-E1-AY-VB is a high-performance unipolar P-type MOSFET in TO252 package with excellent conduction performance and low RDS(ON) characteristics, suitable for various power management and switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -60V -1.7V -50A 20mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -60V -1.7V -50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -60V -1.7V -50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single P type
- **VDS**: -60V
- **VGS**: ±20V
- **Vth**: -1.7V
- **RDS(ON)**: 25mΩ@VGS=4.5V; 20mΩ@VGS=10V
- **ID**: -50A
- **Technology**: Trench

Domain and module applications:

Application fields and modules: This MOSFET is widely used in modules such as power converters, motor drivers and load switches. Due to its low on-resistance and high current carrying capacity, it is very suitable for use in high-efficiency power management systems. In addition, it can also be used in battery management systems and renewable energy applications to achieve efficient energy conversion and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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