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NP36N10SDE-VB Product details
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1. NP36N10SDE-VB Product Introduction
NP36N10SDE-VB is a high-performance **N-channel power MOSFET**, which adopts **TO252** package and is designed for high voltage applications. The device supports **maximum 100V drain-source voltage (VDS)** and ±20V gate-source voltage (VGS), and its **threshold voltage (Vth)** is **1.8V**, ensuring stable operation in low voltage environment. NP36N10SDE-VB has a low on-resistance, **35mΩ** at VGS=4.5V, and only 30mΩ** at **VGS=10V, which enables it to effectively reduce power consumption in applications with high switching frequencies. The **maximum drain current (ID)** of this MOSFET reaches **40A**, making it suitable for a variety of high-power requirements. It also adopts advanced **Trench technology** to achieve better performance and thermal management.
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NP36N10SDE-VB is a high-performance **N-channel power MOSFET**, which adopts **TO252** package and is designed for high voltage applications. The device supports **maximum 100V drain-source voltage (VDS)** and ±20V gate-source voltage (VGS), and its **threshold voltage (Vth)** is **1.8V**, ensuring stable operation in low voltage environment. NP36N10SDE-VB has a low on-resistance, **35mΩ** at VGS=4.5V, and only 30mΩ** at **VGS=10V, which enables it to effectively reduce power consumption in applications with high switching frequencies. The **maximum drain current (ID)** of this MOSFET reaches **40A**, making it suitable for a variety of high-power requirements. It also adopts advanced **Trench technology** to achieve better performance and thermal management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. NP36N10SDE-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-----------------------|--------------------------|----------------------------------------------------|
| **Package** | TO252 | SMD package suitable for high power density applications, easy to dissipate heat. |
| **Configuration** | Single-N-Channel | Single N-channel MOSFET, suitable for a variety of load control occasions. |
| **Drain-Source Voltage (VDS)** | 100V | Maximum drain-source voltage, suitable for high-voltage application systems. |
| **Gate-Source Voltage (VGS)** | ±20V | Maximum gate-source voltage, supporting a wide range of control circuit designs. |
| **Threshold Voltage (Vth)** | 1.8V | Ensures stable turn-on at low voltage, suitable for low-power circuits. |
| **On-resistance (RDS(ON))** | 35mΩ @ VGS=4.5V | On-resistance at low gate voltage helps improve efficiency. |
| | 30mΩ @ VGS=10V | On-resistance at high gate voltage, suitable for high current transmission applications. |
| **Drain current (ID)** | 40A | Supports high current loads and enhances system power handling capabilities. |
| **Technology** | Trench | Trench technology provides higher power density and lower conduction losses. |
| **Operating temperature range** | -55°C ~ +175°C | Wide operating temperature range, suitable for various environmental conditions. |
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| **Parameter** | **Value** | **Description** |
|-----------------------|--------------------------|----------------------------------------------------|
| **Package** | TO252 | SMD package suitable for high power density applications, easy to dissipate heat. |
| **Configuration** | Single-N-Channel | Single N-channel MOSFET, suitable for a variety of load control occasions. |
| **Drain-Source Voltage (VDS)** | 100V | Maximum drain-source voltage, suitable for high-voltage application systems. |
| **Gate-Source Voltage (VGS)** | ±20V | Maximum gate-source voltage, supporting a wide range of control circuit designs. |
| **Threshold Voltage (Vth)** | 1.8V | Ensures stable turn-on at low voltage, suitable for low-power circuits. |
| **On-resistance (RDS(ON))** | 35mΩ @ VGS=4.5V | On-resistance at low gate voltage helps improve efficiency. |
| | 30mΩ @ VGS=10V | On-resistance at high gate voltage, suitable for high current transmission applications. |
| **Drain current (ID)** | 40A | Supports high current loads and enhances system power handling capabilities. |
| **Technology** | Trench | Trench technology provides higher power density and lower conduction losses. |
| **Operating temperature range** | -55°C ~ +175°C | Wide operating temperature range, suitable for various environmental conditions. |
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Domain and module applications：
3. Application fields and module examples
1. **Switching Power Supplies**
NP36N10SDE-VB is very suitable for use in switching power supplies, especially for **DC-DC converters**, which can improve power efficiency and reduce heat loss.
**Example:** In **industrial power modules**, it provides efficient energy conversion and helps optimize the power supply system.
2. **Power Tools and Appliances**
In power tools and appliances**, this MOSFET can be used for **motor drive control** to achieve efficient power output and power management.
**Example:** Used in **brushless motor drive** systems to ensure efficient power transfer and long-term working ability.
3. **Automotive Electronics**
NP36N10SDE-VB can be used in **Battery Management System (BMS)** and **Electric Power Steering System** in automotive electronics. Its high current capability and low conduction loss make it an ideal choice.
**Example:** In **Hybrid Electric Vehicle**, it provides reliable current control in battery charge and discharge management.
4. **LED Drivers**
The low on-resistance of this device makes it suitable for **high-power LED driver circuits**, which can effectively improve the efficiency and stability of the light source.
**Example:** In **LED lighting modules**, it improves driving efficiency and extends LED life.
5. **Power Management ICs**
In various power management solutions, NP36N10SDE-VB can be used as a **load switch** or **power switch** to help achieve better power distribution and control.
**Example:** Ensure low power consumption and efficient energy management in the power management system of **smartphone**.
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NP36N10SDE-VB has become an indispensable component in modern high-power applications with its excellent performance and wide application areas. Its low on-resistance and high current capability show excellent value in multiple industries and are suitable for playing an important role in efficient power management and control systems.
1. **Switching Power Supplies**
NP36N10SDE-VB is very suitable for use in switching power supplies, especially for **DC-DC converters**, which can improve power efficiency and reduce heat loss.
**Example:** In **industrial power modules**, it provides efficient energy conversion and helps optimize the power supply system.
2. **Power Tools and Appliances**
In power tools and appliances**, this MOSFET can be used for **motor drive control** to achieve efficient power output and power management.
**Example:** Used in **brushless motor drive** systems to ensure efficient power transfer and long-term working ability.
3. **Automotive Electronics**
NP36N10SDE-VB can be used in **Battery Management System (BMS)** and **Electric Power Steering System** in automotive electronics. Its high current capability and low conduction loss make it an ideal choice.
**Example:** In **Hybrid Electric Vehicle**, it provides reliable current control in battery charge and discharge management.
4. **LED Drivers**
The low on-resistance of this device makes it suitable for **high-power LED driver circuits**, which can effectively improve the efficiency and stability of the light source.
**Example:** In **LED lighting modules**, it improves driving efficiency and extends LED life.
5. **Power Management ICs**
In various power management solutions, NP36N10SDE-VB can be used as a **load switch** or **power switch** to help achieve better power distribution and control.
**Example:** Ensure low power consumption and efficient energy management in the power management system of **smartphone**.
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NP36N10SDE-VB has become an indispensable component in modern high-power applications with its excellent performance and wide application areas. Its low on-resistance and high current capability show excellent value in multiple industries and are suitable for playing an important role in efficient power management and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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