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NP36N055SLE-VB Product details
Back to previous pageProduct introduction：
1. NP36N055SLE-VB Product Introduction
NP36N055SLE-VB is a high-performance **single N-channel MOSFET**, using **TO252** package, designed for high voltage and high current applications. It has **60V** drain-source voltage (V\(_{DS}\)) and ±20V gate-source voltage (V\(_{GS}\)), and can work stably in a variety of environments. Its **threshold voltage (V\(_{th}\)) is 2.5V**, showing excellent control characteristics. The on-resistance of this model is 13mΩ** at **V\(_{GS}\)=4.5V and 10mΩ** at **V\(_{GS}\)=10V, ensuring efficient current conduction capability. The maximum drain current can reach **58A**. The **Trench technology** it uses can significantly reduce conduction losses and improve power management efficiency. It is suitable for various power conversion and drive systems.
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NP36N055SLE-VB is a high-performance **single N-channel MOSFET**, using **TO252** package, designed for high voltage and high current applications. It has **60V** drain-source voltage (V\(_{DS}\)) and ±20V gate-source voltage (V\(_{GS}\)), and can work stably in a variety of environments. Its **threshold voltage (V\(_{th}\)) is 2.5V**, showing excellent control characteristics. The on-resistance of this model is 13mΩ** at **V\(_{GS}\)=4.5V and 10mΩ** at **V\(_{GS}\)=10V, ensuring efficient current conduction capability. The maximum drain current can reach **58A**. The **Trench technology** it uses can significantly reduce conduction losses and improve power management efficiency. It is suitable for various power conversion and drive systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. NP36N055SLE-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|--------------------------|-------------------------------|----------------------------------|
| **Package type** | TO252 | Compact design, suitable for a variety of application scenarios|
| **Configuration** | Single N-channel | Supports single channel control|
| **V\(_{DS}\)** | 60V | Maximum voltage between drain and source|
| **V\(_{GS}\)** | ±20V | Maximum voltage between gate and source|
| **V\(_{th}\)** | 2.5V | Threshold voltage required for turn-on|
| **R\(_{DS(on)}\)** | 13mΩ @ V\(_{GS}\)=4.5V | On-resistance in the on state|
| **R\(_{DS(on)}\)** | 10mΩ @ V\(_{GS}\)=10V | On-resistance in on state|
| **I\(_{D}\)** | 58A | Maximum continuous drain current|
| **Technology** | Trench | Provides low on-resistance and high performance|
| **Operating temperature range** | -55°C ~ 150°C | Supports stable operation in harsh environments|
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| **Parameter** | **Value** | **Description** |
|--------------------------|-------------------------------|----------------------------------|
| **Package type** | TO252 | Compact design, suitable for a variety of application scenarios|
| **Configuration** | Single N-channel | Supports single channel control|
| **V\(_{DS}\)** | 60V | Maximum voltage between drain and source|
| **V\(_{GS}\)** | ±20V | Maximum voltage between gate and source|
| **V\(_{th}\)** | 2.5V | Threshold voltage required for turn-on|
| **R\(_{DS(on)}\)** | 13mΩ @ V\(_{GS}\)=4.5V | On-resistance in the on state|
| **R\(_{DS(on)}\)** | 10mΩ @ V\(_{GS}\)=10V | On-resistance in on state|
| **I\(_{D}\)** | 58A | Maximum continuous drain current|
| **Technology** | Trench | Provides low on-resistance and high performance|
| **Operating temperature range** | -55°C ~ 150°C | Supports stable operation in harsh environments|
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Domain and module applications：
3. Application fields and module examples
1. **Power conversion and management system**
NP36N055SLE-VB is suitable for efficient DC-DC converters and power modules, especially in current-intensive applications. Its low on-resistance (10mΩ) can reduce energy loss, thereby improving the overall efficiency of the power system.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In the drive system and battery management of electric vehicles, this MOSFET can handle currents up to 58A, ensure fast charging and discharging of the battery, and provide efficient power conversion. It plays an important role in the power control and energy management system of electric vehicles.
3. **Motor drive and control module**
This device is suitable for drive control of DC motors and brushless motors, especially in industrial automation and robotics. The high current carrying capacity and fast switching characteristics of NP36N055SLE-VB make it an ideal choice for motor drive systems.
4. **Consumer Electronics and Smart Devices**
In smart home and consumer electronics, this MOSFET can be used in power adapters and LED drivers to support high-efficiency and miniaturized designs. Its stability and high current handling capability ensure safe and efficient operation of the equipment.
5. **Renewable Energy Systems**
NP36N055SLE-VB can be used in solar inverters and wind power generation systems to promote efficient energy conversion and management. In these applications, its high temperature and high voltage characteristics enable reliable operation in a variety of environments.
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NP36N055SLE-VB is a high-efficiency single N-channel MOSFET that is widely used in power management and high current applications due to its low on-resistance and excellent current handling capability. Its outstanding performance in industrial and consumer electronics makes it an indispensable component in modern power systems.
1. **Power conversion and management system**
NP36N055SLE-VB is suitable for efficient DC-DC converters and power modules, especially in current-intensive applications. Its low on-resistance (10mΩ) can reduce energy loss, thereby improving the overall efficiency of the power system.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In the drive system and battery management of electric vehicles, this MOSFET can handle currents up to 58A, ensure fast charging and discharging of the battery, and provide efficient power conversion. It plays an important role in the power control and energy management system of electric vehicles.
3. **Motor drive and control module**
This device is suitable for drive control of DC motors and brushless motors, especially in industrial automation and robotics. The high current carrying capacity and fast switching characteristics of NP36N055SLE-VB make it an ideal choice for motor drive systems.
4. **Consumer Electronics and Smart Devices**
In smart home and consumer electronics, this MOSFET can be used in power adapters and LED drivers to support high-efficiency and miniaturized designs. Its stability and high current handling capability ensure safe and efficient operation of the equipment.
5. **Renewable Energy Systems**
NP36N055SLE-VB can be used in solar inverters and wind power generation systems to promote efficient energy conversion and management. In these applications, its high temperature and high voltage characteristics enable reliable operation in a variety of environments.
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NP36N055SLE-VB is a high-efficiency single N-channel MOSFET that is widely used in power management and high current applications due to its low on-resistance and excellent current handling capability. Its outstanding performance in industrial and consumer electronics makes it an indispensable component in modern power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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