中文
English
NP36N055SLE-E1-AY-VB Product details
Back to previous pageProduct introduction：
1. NP36N055SLE-E1-AY-VB Product Introduction
NP36N055SLE-E1-AY-VB is a **Single N-Channel MOSFET**, using **TO252** package, designed for high-efficiency power supply applications. Its drain-source voltage (VDS) can reach **60V**, and supports gate-source voltage (VGS) up to **±20V**. The device has a turn-on threshold voltage (Vth) of **2.5V**, and its on-resistance (RDS(ON)) is only **13mΩ** at **VGS=4.5V**, and is even lower at **10mΩ** at **VGS=10V**, which makes it perform well in high-current applications. The maximum drain current (ID) can reach **58A**, which is suitable for circuit designs that require high current. Using **Trench** technology, NP36N055SLE-E1-AY-VB can effectively reduce conduction loss and improve the overall efficiency of the system. It is widely used in switching power supplies, industrial control, motor drives and other fields.
---
NP36N055SLE-E1-AY-VB is a **Single N-Channel MOSFET**, using **TO252** package, designed for high-efficiency power supply applications. Its drain-source voltage (VDS) can reach **60V**, and supports gate-source voltage (VGS) up to **±20V**. The device has a turn-on threshold voltage (Vth) of **2.5V**, and its on-resistance (RDS(ON)) is only **13mΩ** at **VGS=4.5V**, and is even lower at **10mΩ** at **VGS=10V**, which makes it perform well in high-current applications. The maximum drain current (ID) can reach **58A**, which is suitable for circuit designs that require high current. Using **Trench** technology, NP36N055SLE-E1-AY-VB can effectively reduce conduction loss and improve the overall efficiency of the system. It is widely used in switching power supplies, industrial control, motor drives and other fields.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. NP36N055SLE-E1-AY-VB Detailed parameter description
| **Parameter name** | **Specification** | **Description** |
|------------------------|------------------------------|----------------------------------------|
| **Model** | NP36N055SLE-E1-AY-VB | |
| **Package type** | TO252 | Small package, suitable for high-density circuit design|
| **Configuration** | Single N-Channel | Single-channel N-channel MOSFET |
| **Drain-source voltage (VDS)** | 60V | Can be used for medium and high voltage power supplies|
| **Gate-source voltage (VGS)** | ±20V | Supports a wide gate drive voltage range|
| **Turning threshold voltage (Vth)** | 2.5V | Minimum voltage required for gate turn-on|
| **On-resistance (RDS(ON))** | 13mΩ @ VGS=4.5V | Low resistance at lower gate voltage|
| **On-resistance (RDS(ON))** | 10mΩ @ VGS=10V | Further reduced conduction losses at higher gate voltage|
| **Drain current (ID)** | 58A | Maximum drain current for high power applications|
| **Technology** | Trench | Using low-loss trench technology|
---
| **Parameter name** | **Specification** | **Description** |
|------------------------|------------------------------|----------------------------------------|
| **Model** | NP36N055SLE-E1-AY-VB | |
| **Package type** | TO252 | Small package, suitable for high-density circuit design|
| **Configuration** | Single N-Channel | Single-channel N-channel MOSFET |
| **Drain-source voltage (VDS)** | 60V | Can be used for medium and high voltage power supplies|
| **Gate-source voltage (VGS)** | ±20V | Supports a wide gate drive voltage range|
| **Turning threshold voltage (Vth)** | 2.5V | Minimum voltage required for gate turn-on|
| **On-resistance (RDS(ON))** | 13mΩ @ VGS=4.5V | Low resistance at lower gate voltage|
| **On-resistance (RDS(ON))** | 10mΩ @ VGS=10V | Further reduced conduction losses at higher gate voltage|
| **Drain current (ID)** | 58A | Maximum drain current for high power applications|
| **Technology** | Trench | Using low-loss trench technology|
---
Domain and module applications：
3. Application fields and module examples
1. **Switching power supply (SMPS)**
NP36N055SLE-E1-AY-VB is commonly used in **switching power supply**, which can effectively reduce conduction loss and improve power efficiency, ensuring stable output voltage under high load conditions.
2. **Motor drive**
In **motor control** applications, this MOSFET can be used as a switching element in **H-bridge circuit**, which can support large current and is suitable for various motor drive systems, such as DC motor and stepper motor control.
3. **Battery management system (BMS)**
This device can be used in **lithium battery pack charge and discharge management**, providing high-efficiency switching functions to ensure battery safety and performance, especially in electric vehicles and portable devices.
4. **Power Modules and Power Converters**
NP36N055SLE-E1-AY-VB can be used in a variety of **power converters and power management modules**, capable of handling high current and high power in a small space to meet the needs of modern electronic products.
5. **Industrial Automation**
This MOSFET is suitable for power control circuits in **industrial automation equipment**, such as power drive and control systems, to ensure efficient and stable operation of the system.
---
The high current carrying capacity, low on-resistance and high efficiency of NP36N055SLE-E1-AY-VB make it an ideal choice for modern power management and motor control applications. Its TO252 package not only supports high-density layout, but also effectively improves heat dissipation performance.
1. **Switching power supply (SMPS)**
NP36N055SLE-E1-AY-VB is commonly used in **switching power supply**, which can effectively reduce conduction loss and improve power efficiency, ensuring stable output voltage under high load conditions.
2. **Motor drive**
In **motor control** applications, this MOSFET can be used as a switching element in **H-bridge circuit**, which can support large current and is suitable for various motor drive systems, such as DC motor and stepper motor control.
3. **Battery management system (BMS)**
This device can be used in **lithium battery pack charge and discharge management**, providing high-efficiency switching functions to ensure battery safety and performance, especially in electric vehicles and portable devices.
4. **Power Modules and Power Converters**
NP36N055SLE-E1-AY-VB can be used in a variety of **power converters and power management modules**, capable of handling high current and high power in a small space to meet the needs of modern electronic products.
5. **Industrial Automation**
This MOSFET is suitable for power control circuits in **industrial automation equipment**, such as power drive and control systems, to ensure efficient and stable operation of the system.
---
The high current carrying capacity, low on-resistance and high efficiency of NP36N055SLE-E1-AY-VB make it an ideal choice for modern power management and motor control applications. Its TO252 package not only supports high-density layout, but also effectively improves heat dissipation performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
