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NP36N055SHE-E1-AY-VB Product details
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1. NP36N055SHE-E1-AY-VB Product Introduction
NP36N055SHE-E1-AY-VB is a **single N-channel MOSFET**, using **TO-252 package**, designed for high current and high-efficiency applications. Its **drain-source voltage (VDS)** can reach **60V**, supports a gate-source voltage (VGS) of ±20V, and has a low turn-on voltage (Vth) of **2.5V**. At **VGS = 10V**, its on-resistance (RDS(ON)) is as low as **10mΩ**, providing excellent conductivity. The **maximum drain current (ID)** of NP36N055SHE-E1-AY-VB can reach **58A**, making it perform well in a variety of applications, especially in power management and electric devices. This MOSFET uses **Trench technology** to optimize switching speed and thermal management, providing an ideal solution for electronic designers.
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NP36N055SHE-E1-AY-VB is a **single N-channel MOSFET**, using **TO-252 package**, designed for high current and high-efficiency applications. Its **drain-source voltage (VDS)** can reach **60V**, supports a gate-source voltage (VGS) of ±20V, and has a low turn-on voltage (Vth) of **2.5V**. At **VGS = 10V**, its on-resistance (RDS(ON)) is as low as **10mΩ**, providing excellent conductivity. The **maximum drain current (ID)** of NP36N055SHE-E1-AY-VB can reach **58A**, making it perform well in a variety of applications, especially in power management and electric devices. This MOSFET uses **Trench technology** to optimize switching speed and thermal management, providing an ideal solution for electronic designers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. NP36N055SHE-E1-AY-VB Detailed parameter description
| **Parameter** | **Description** | **Value** |
|-------------------------|----------------------------------------|----------------------|
| **Package** | TO-252 | Optimized heat dissipation design|
| **Configuration** | Single N-channel MOSFET | High-efficiency switching element|
| **Drain-source voltage (VDS)** | Maximum withstand voltage| 60V |
| **Gate-source voltage (VGS)** | Gate withstand voltage| ±20V |
| **Through voltage (Vth)** | Turn-on voltage| 2.5V |
| **On-resistance (RDS(ON))** | @ VGS = 10V | 10mΩ |
| **On-resistance (RDS(ON))** | @ VGS = 4.5V | 13mΩ |
| **Maximum drain current (ID)** | Maximum continuous current| 58A |
| **Technology** | Trench technology| High efficiency and low loss design|
| **Operating temperature range** | Operating temperature| -55°C to 175°C |
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| **Parameter** | **Description** | **Value** |
|-------------------------|----------------------------------------|----------------------|
| **Package** | TO-252 | Optimized heat dissipation design|
| **Configuration** | Single N-channel MOSFET | High-efficiency switching element|
| **Drain-source voltage (VDS)** | Maximum withstand voltage| 60V |
| **Gate-source voltage (VGS)** | Gate withstand voltage| ±20V |
| **Through voltage (Vth)** | Turn-on voltage| 2.5V |
| **On-resistance (RDS(ON))** | @ VGS = 10V | 10mΩ |
| **On-resistance (RDS(ON))** | @ VGS = 4.5V | 13mΩ |
| **Maximum drain current (ID)** | Maximum continuous current| 58A |
| **Technology** | Trench technology| High efficiency and low loss design|
| **Operating temperature range** | Operating temperature| -55°C to 175°C |
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Domain and module applications：
3. Application fields and module examples
1. **Power management system**
NP36N055SHE-E1-AY-VB is widely used in **DC-DC converters** and **power adapters**. Its low on-resistance and high current handling capability make it an important component of efficient power conversion, which can effectively reduce energy loss and improve overall efficiency.
2. **Electric vehicles**
In **Electric vehicles (EV)**, this MOSFET can be used in battery management systems and motor controllers. Its high current carrying capacity ensures that it can handle rapidly changing load requirements, thereby improving the vehicle's acceleration performance and range.
3. **Industrial automation equipment**
NP36N055SHE-E1-AY-VB can be used in **Electric drive and control systems**, such as motor drives and servo controllers. Its fast switching capability and high load capacity make it suitable for achieving efficient and stable performance in precision industrial applications.
4. **Consumer Electronics**
This MOSFET is also widely used in **portable devices** and **smartphone chargers**, which can effectively manage power and provide stable charging efficiency to enhance user experience.
5. **Uninterruptible Power Supply (UPS)**
In **UPS systems**, NP36N055SHE-E1-AY-VB can be used as a switching element to support instantaneous switching when the mains power is interrupted to ensure stable power supply of the system.
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NP36N055SHE-E1-AY-VB has excellent performance in power management, automotive, industrial and consumer electronics with its high efficiency and low loss, and is an ideal choice for electronic engineers in high current applications.
1. **Power management system**
NP36N055SHE-E1-AY-VB is widely used in **DC-DC converters** and **power adapters**. Its low on-resistance and high current handling capability make it an important component of efficient power conversion, which can effectively reduce energy loss and improve overall efficiency.
2. **Electric vehicles**
In **Electric vehicles (EV)**, this MOSFET can be used in battery management systems and motor controllers. Its high current carrying capacity ensures that it can handle rapidly changing load requirements, thereby improving the vehicle's acceleration performance and range.
3. **Industrial automation equipment**
NP36N055SHE-E1-AY-VB can be used in **Electric drive and control systems**, such as motor drives and servo controllers. Its fast switching capability and high load capacity make it suitable for achieving efficient and stable performance in precision industrial applications.
4. **Consumer Electronics**
This MOSFET is also widely used in **portable devices** and **smartphone chargers**, which can effectively manage power and provide stable charging efficiency to enhance user experience.
5. **Uninterruptible Power Supply (UPS)**
In **UPS systems**, NP36N055SHE-E1-AY-VB can be used as a switching element to support instantaneous switching when the mains power is interrupted to ensure stable power supply of the system.
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NP36N055SHE-E1-AY-VB has excellent performance in power management, automotive, industrial and consumer electronics with its high efficiency and low loss, and is an ideal choice for electronic engineers in high current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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