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NP34N055ILE-VB Product details

Product introduction:



The NP34N055ILE-VB is a high-performance **N-channel MOSFET** in a **TO252 package**, designed for high current and medium voltage applications. The device has a **60V drain-source voltage (V\(_{DS}\)**) and a ±20V gate-source voltage (V\(_{GS}\)**, suitable for a variety of power management and switching applications. The threshold voltage (V\(_{th}\)**) is 2.5V, ensuring fast turn-on at a lower gate drive voltage, greatly improving switching speed.

The on-resistance of the NP34N055ILE-VB is 13mΩ** at a gate voltage of **4.5V**, and is lower at a gate voltage of **10V**, reaching 10mΩ**, making it ideal for applications that require high efficiency and low power consumption. Its maximum drain current capability of 58A enables it to meet high load requirements and is suitable for various power management systems and power conversion applications.

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## 2. NP34N055ILE-VB

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 2.5V 58A 10mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 2.5V 58A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 2.5V 58A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N


| **Parameter** | **Value** | **Description** |
|---------------------|---------------------------------|-----------------------------------------------|
| **Package Type** | TO252 | Compact package for high power applications|
| **Configuration** | Single-N-Channel | Single N-channel MOSFET for single channel switch applications|
| **V\(_{DS}\)** | 60V | Maximum drain-source voltage for medium voltage applications|
| **V\(_{GS}\)** | ±20V | Gate-source voltage range for increased circuit design flexibility|
| **V\(_{th}\)** | 2.5V | Threshold voltage for fast turn-on|
| **R\(_{DS(ON)}\)** | 13mΩ (@V\(_{GS}\) = 4.5V) | Provides lower on-resistance at lower gate voltages|
| | 10mΩ (@V\(_{GS}\) = 10V) | Further reduces on-resistance at higher gate voltages|
| **I\(_D\)** | 58A | Maximum continuous drain current to support high load requirements|
| **Technology** | Trench | Provides high efficiency and fast switching performance|
| **Operating temperature range** | -55°C ~ +175°C | Adapts to a variety of harsh environments|

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## III. NP34N055ILE-VB

Domain and module applications:



1. **Electric Vehicles and Hybrid Electric Vehicles (EV/HEV)**
- The NP34N055ILE-VB is ideal for **motor drive control** and **battery management systems** in electric vehicles. Its high current capability and low on-resistance ensure high efficiency and long driving range.

2. **Power Management and Switching Power Supply**
- In **switching power supplies (SMPS)** and **DC-DC converters**, the fast switching characteristics and high efficiency of the NP34N055ILE-VB help reduce energy loss, improve overall system efficiency, and meet various power application requirements.

3. **Industrial Automation Equipment**
- This MOSFET can be used in **motor control** and **load drive circuits** in **industrial automation systems** to provide reliable power control and ensure stable operation of the equipment.

4. **Home Appliances and Consumer Electronics**
- In smart home and consumer electronics products, such as **LED lighting drivers** and **smart sockets**, the NP34N055ILE-VB provides a high-efficiency switching solution to extend product life and reduce power consumption.

5. **Solar and Energy Storage Systems**
- This MOSFET excels in **photovoltaic inverters** and **energy storage applications**, optimizing energy transfer and ensuring operation at high efficiency.

With its excellent performance, very low on-resistance and high current capability, the NP34N055ILE-VB is ideal for efficient power management and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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