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NP34N03ILD-VB Product details
Back to previous pageProduct introduction：
1. NP34N03ILD-VB Product Introduction
NP34N03ILD-VB is a **single N-channel MOSFET**, using **TO252 package**, designed for high current and low voltage applications. Its maximum drain-source voltage (VDS) is **30V**, and the gate-source voltage (VGS) range is **±20V**, which makes it perform well in a variety of power management and power conversion applications. The device has a turn-on voltage (Vth) of **1.7V**, and its on-resistance (RDS(ON)) is as low as **5mΩ** when VGS is 10V, and **6mΩ** when VGS is 4.5V, ensuring high efficiency when working at high current. With a maximum drain current (ID) of **80A** and a design based on **Trench technology**, NP34N03ILD-VB has excellent performance in power efficiency and thermal management, and is widely used in motor drives, switching power supplies and battery management systems.
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NP34N03ILD-VB is a **single N-channel MOSFET**, using **TO252 package**, designed for high current and low voltage applications. Its maximum drain-source voltage (VDS) is **30V**, and the gate-source voltage (VGS) range is **±20V**, which makes it perform well in a variety of power management and power conversion applications. The device has a turn-on voltage (Vth) of **1.7V**, and its on-resistance (RDS(ON)) is as low as **5mΩ** when VGS is 10V, and **6mΩ** when VGS is 4.5V, ensuring high efficiency when working at high current. With a maximum drain current (ID) of **80A** and a design based on **Trench technology**, NP34N03ILD-VB has excellent performance in power efficiency and thermal management, and is widely used in motor drives, switching power supplies and battery management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. NP34N03ILD-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|------------------------|-----------------------|-------------------------------------------|
| **Package Type** | TO252 | Compact package, suitable for surface mount applications, easy heat dissipation. |
| **MOSFET Configuration** | Single N-channel | Suitable for general-purpose switch and amplifier applications. |
| **Drain-Source Voltage (VDS)** | 30V | Suitable for low-voltage applications, meeting a variety of power supply requirements. |
| **Gate-Source Voltage (VGS)** | ±20V | Provides a wide voltage range to adapt to a variety of drive circuits. |
| **Turning Voltage (Vth)** | 1.7V | Ensures that the MOSFET works stably under common drive voltages. |
| **On-resistance (RDS(ON))** | 5mΩ @ VGS=10V | Very low on-resistance, improved efficiency, reduced heat. |
| **On-resistance (RDS(ON))** | 6mΩ @ VGS=4.5V | Excellent performance even at lower gate-source voltages. |
| **Drain current (ID)** | 80A | High current carrying capability for high power applications. |
| **Technology type** | Trench | Improve switching speed and efficiency, and optimize thermal management performance. |
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| **Parameter** | **Value** | **Description** |
|------------------------|-----------------------|-------------------------------------------|
| **Package Type** | TO252 | Compact package, suitable for surface mount applications, easy heat dissipation. |
| **MOSFET Configuration** | Single N-channel | Suitable for general-purpose switch and amplifier applications. |
| **Drain-Source Voltage (VDS)** | 30V | Suitable for low-voltage applications, meeting a variety of power supply requirements. |
| **Gate-Source Voltage (VGS)** | ±20V | Provides a wide voltage range to adapt to a variety of drive circuits. |
| **Turning Voltage (Vth)** | 1.7V | Ensures that the MOSFET works stably under common drive voltages. |
| **On-resistance (RDS(ON))** | 5mΩ @ VGS=10V | Very low on-resistance, improved efficiency, reduced heat. |
| **On-resistance (RDS(ON))** | 6mΩ @ VGS=4.5V | Excellent performance even at lower gate-source voltages. |
| **Drain current (ID)** | 80A | High current carrying capability for high power applications. |
| **Technology type** | Trench | Improve switching speed and efficiency, and optimize thermal management performance. |
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Domain and module applications：
III. Application Fields and Module Examples
1. **Motor Drive Systems**:
NP34N03ILD-VB can be widely used in **DC motor controllers** and **stepper motor drivers**. Its high current carrying capacity and low on-resistance reduce the energy consumption of the motor during startup and operation, thereby improving the overall efficiency and reliability of the motor system.
2. **Switching Power Supplies**:
In **switching power supply** designs, NP34N03ILD-VB can be used as the main switching element. Its fast switching characteristics and low on-resistance help reduce switching losses and improve energy efficiency, and are suitable for power conversion in consumer electronics, computers, and industrial equipment.
3. **Battery Management Systems (BMS)**:
In **electric vehicles** and **energy storage systems**, NP34N03ILD-VB is used to control battery charging and discharging, ensuring efficient power transmission and thermal management, and improving battery life and performance. Its high drain current supports high current charging and discharging processes, meeting the needs of modern battery systems.
4. **LED Drivers**:
This MOSFET can be used in **LED driver circuits** to provide stable current output, ensuring high efficiency and long life of LED lighting equipment. Its low on-resistance and high current capability make it suitable for high-power LED applications.
5. **Power Distribution and Control**:
In **power management systems**, NP34N03ILD-VB can be used as a power switch, suitable for scenarios that require fast switching and high power control, such as **power management in data centers** and **industrial automation control systems**.
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NP34N03ILD-VB is a high-efficiency single N-channel MOSFET. With its ultra-low on-resistance and high current carrying capability, it has demonstrated excellent performance in many fields such as motor drive, switching power supply, battery management, LED drive and power distribution system, becoming a key component in modern power electronic design.
1. **Motor Drive Systems**:
NP34N03ILD-VB can be widely used in **DC motor controllers** and **stepper motor drivers**. Its high current carrying capacity and low on-resistance reduce the energy consumption of the motor during startup and operation, thereby improving the overall efficiency and reliability of the motor system.
2. **Switching Power Supplies**:
In **switching power supply** designs, NP34N03ILD-VB can be used as the main switching element. Its fast switching characteristics and low on-resistance help reduce switching losses and improve energy efficiency, and are suitable for power conversion in consumer electronics, computers, and industrial equipment.
3. **Battery Management Systems (BMS)**:
In **electric vehicles** and **energy storage systems**, NP34N03ILD-VB is used to control battery charging and discharging, ensuring efficient power transmission and thermal management, and improving battery life and performance. Its high drain current supports high current charging and discharging processes, meeting the needs of modern battery systems.
4. **LED Drivers**:
This MOSFET can be used in **LED driver circuits** to provide stable current output, ensuring high efficiency and long life of LED lighting equipment. Its low on-resistance and high current capability make it suitable for high-power LED applications.
5. **Power Distribution and Control**:
In **power management systems**, NP34N03ILD-VB can be used as a power switch, suitable for scenarios that require fast switching and high power control, such as **power management in data centers** and **industrial automation control systems**.
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NP34N03ILD-VB is a high-efficiency single N-channel MOSFET. With its ultra-low on-resistance and high current carrying capability, it has demonstrated excellent performance in many fields such as motor drive, switching power supply, battery management, LED drive and power distribution system, becoming a key component in modern power electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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