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NP180N04TUJ-VB Product details
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1. NP180N04TUJ-VB Product Introduction
NP180N04TUJ-VB is a high-performance **N-channel power MOSFET**, using **TO263** package, designed for applications requiring ultra-low conduction loss and high current capability. The device supports **maximum 40V drain-source voltage (VDS)** and ±20V gate-source voltage (VGS), and its **threshold voltage (Vth)** is **3V**, ensuring stable turn-on under a variety of control voltages. The on-resistance (RDS(ON)) at **VGS=10V** is only **1.4mΩ**, and even at **VGS=4.5V**, the on-resistance remains as low as **1.68mΩ**, greatly reducing power loss. The device supports **280A** of continuous drain current, which is ideal for high current applications, and uses advanced **Trench technology** to provide higher power density and excellent heat dissipation performance.
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NP180N04TUJ-VB is a high-performance **N-channel power MOSFET**, using **TO263** package, designed for applications requiring ultra-low conduction loss and high current capability. The device supports **maximum 40V drain-source voltage (VDS)** and ±20V gate-source voltage (VGS), and its **threshold voltage (Vth)** is **3V**, ensuring stable turn-on under a variety of control voltages. The on-resistance (RDS(ON)) at **VGS=10V** is only **1.4mΩ**, and even at **VGS=4.5V**, the on-resistance remains as low as **1.68mΩ**, greatly reducing power loss. The device supports **280A** of continuous drain current, which is ideal for high current applications, and uses advanced **Trench technology** to provide higher power density and excellent heat dissipation performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. NP180N04TUJ-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|-----------------------|--------------------------|----------------------------------------------------|
| **Package** | TO263 | SMD package with good heat dissipation characteristics, suitable for high-power applications. |
| **Configuration** | Single-N-Channel | Single N-channel MOSFET, suitable for load control and power management. |
| **Drain-Source Voltage (VDS)** | 40V | Maximum drain-source voltage, suitable for low-voltage and medium-voltage power supply systems. |
| **Gate-Source Voltage (VGS)** | ±20V | Maximum gate voltage, suitable for the design of different control circuits. |
| **Threshold Voltage (Vth)** | 3V | Ensures reliable turn-on of the device at a lower voltage. |
| **On-resistance (RDS(ON))** | 1.68mΩ @ VGS=4.5V | On-resistance at low gate voltage, suitable for energy-saving design. |
| | 1.4mΩ @ VGS=10V | On-resistance at high gate voltage, suitable for high current transmission occasions. |
| **Drain current (ID)** | 280A | Supports high current load applications and improves system power handling capabilities. |
| **Technology** | Trench | Trench technology improves power density and reduces losses. |
| **Operating temperature range** | -55°C ~ +175°C | Wide operating temperature range to support harsh industrial environments. |
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| **Parameter** | **Value** | **Description** |
|-----------------------|--------------------------|----------------------------------------------------|
| **Package** | TO263 | SMD package with good heat dissipation characteristics, suitable for high-power applications. |
| **Configuration** | Single-N-Channel | Single N-channel MOSFET, suitable for load control and power management. |
| **Drain-Source Voltage (VDS)** | 40V | Maximum drain-source voltage, suitable for low-voltage and medium-voltage power supply systems. |
| **Gate-Source Voltage (VGS)** | ±20V | Maximum gate voltage, suitable for the design of different control circuits. |
| **Threshold Voltage (Vth)** | 3V | Ensures reliable turn-on of the device at a lower voltage. |
| **On-resistance (RDS(ON))** | 1.68mΩ @ VGS=4.5V | On-resistance at low gate voltage, suitable for energy-saving design. |
| | 1.4mΩ @ VGS=10V | On-resistance at high gate voltage, suitable for high current transmission occasions. |
| **Drain current (ID)** | 280A | Supports high current load applications and improves system power handling capabilities. |
| **Technology** | Trench | Trench technology improves power density and reduces losses. |
| **Operating temperature range** | -55°C ~ +175°C | Wide operating temperature range to support harsh industrial environments. |
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Domain and module applications：
III. Application Fields and Module Examples
1. **Automotive Systems**
NP180N04TUJ-VB is ideal for **Battery Management System (BMS)** and **Start/Stop Control** modules in automotive electronics. Its low on-resistance and high current capability can meet the application of electric vehicles, hybrid vehicles and automotive control modules with high current requirements.
**Example:** Used in **Main power transmission channel** of electric vehicles to ensure fast response and efficient power distribution.
2. **Server and Data Center Power Supplies**
In the power modules of data centers, this MOSFET can be used for **Efficient Power Path Management** and **Load Switching** to improve the energy utilization of the system.
**Example:** Implement **Dynamic Power Switching** in server motherboards to reduce heat accumulation and improve the reliability of power modules.
3. **Switching Mode Power Supply (SMPS)**
The low on-resistance of this device makes it an ideal choice for **high-efficiency DC-DC converters**, and can be used in modules that require high-power and high-efficiency conversion.
**Example:** In the power supply of **industrial control systems**, it helps reduce conversion losses and improve conversion efficiency.
4. **Motor Drive Systems**
NP180N04TUJ-VB can be used in motor control modules, especially for brushless motor (BLDC) and stepper motor drives, and can provide efficient current management.
**Example:** In **power tool** and **robot** controllers, it provides high-power drive capabilities.
5. **Battery Protection Circuit**
In large-capacity battery systems, this device is used to control the battery charge and discharge paths to ensure the safe and efficient use of the battery pack.
**Example:** Used in **Energy storage systems** and **Solar energy systems** to ensure overcurrent protection of the battery and efficient use of energy.
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NP180N04TUJ-VB has demonstrated excellent performance in automotive electronics, data centers, industrial power supplies, and battery management systems with its ultra-low on-resistance and high current capability. Combined with its advanced TO263 package and trench technology, this MOSFET provides excellent heat dissipation performance and high reliability, making it an ideal choice for modern high-power applications.
1. **Automotive Systems**
NP180N04TUJ-VB is ideal for **Battery Management System (BMS)** and **Start/Stop Control** modules in automotive electronics. Its low on-resistance and high current capability can meet the application of electric vehicles, hybrid vehicles and automotive control modules with high current requirements.
**Example:** Used in **Main power transmission channel** of electric vehicles to ensure fast response and efficient power distribution.
2. **Server and Data Center Power Supplies**
In the power modules of data centers, this MOSFET can be used for **Efficient Power Path Management** and **Load Switching** to improve the energy utilization of the system.
**Example:** Implement **Dynamic Power Switching** in server motherboards to reduce heat accumulation and improve the reliability of power modules.
3. **Switching Mode Power Supply (SMPS)**
The low on-resistance of this device makes it an ideal choice for **high-efficiency DC-DC converters**, and can be used in modules that require high-power and high-efficiency conversion.
**Example:** In the power supply of **industrial control systems**, it helps reduce conversion losses and improve conversion efficiency.
4. **Motor Drive Systems**
NP180N04TUJ-VB can be used in motor control modules, especially for brushless motor (BLDC) and stepper motor drives, and can provide efficient current management.
**Example:** In **power tool** and **robot** controllers, it provides high-power drive capabilities.
5. **Battery Protection Circuit**
In large-capacity battery systems, this device is used to control the battery charge and discharge paths to ensure the safe and efficient use of the battery pack.
**Example:** Used in **Energy storage systems** and **Solar energy systems** to ensure overcurrent protection of the battery and efficient use of energy.
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NP180N04TUJ-VB has demonstrated excellent performance in automotive electronics, data centers, industrial power supplies, and battery management systems with its ultra-low on-resistance and high current capability. Combined with its advanced TO263 package and trench technology, this MOSFET provides excellent heat dissipation performance and high reliability, making it an ideal choice for modern high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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