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NP160N055TUK-VB Product details
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1. NP160N055TUK-VB Product Introduction
NP160N055TUK-VB is a **dual N-channel MOSFET** in **TO263-7L** package, designed for high current and high efficiency applications. This model has a **60V** drain-source voltage (V\(_{DS}\)) and a ±20V gate-source voltage (V\(_{GS}\)), with excellent voltage resistance and flexible control capabilities. Its **threshold voltage (V\(_{th}\)) is 3V**, and it exhibits an extremely low on-resistance (R\(_{DS(on)}\) = 2mΩ @ V\(_{GS}\) = 10V) when turned on, ensuring efficient current conduction. Its maximum drain current can reach **150A**, and the use of advanced **Trench technology** can reduce losses and improve system energy efficiency, making it an ideal choice for applications such as power management, drive systems and electric vehicles.
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NP160N055TUK-VB is a **dual N-channel MOSFET** in **TO263-7L** package, designed for high current and high efficiency applications. This model has a **60V** drain-source voltage (V\(_{DS}\)) and a ±20V gate-source voltage (V\(_{GS}\)), with excellent voltage resistance and flexible control capabilities. Its **threshold voltage (V\(_{th}\)) is 3V**, and it exhibits an extremely low on-resistance (R\(_{DS(on)}\) = 2mΩ @ V\(_{GS}\) = 10V) when turned on, ensuring efficient current conduction. Its maximum drain current can reach **150A**, and the use of advanced **Trench technology** can reduce losses and improve system energy efficiency, making it an ideal choice for applications such as power management, drive systems and electric vehicles.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
II. NP160N055TUK-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|--------------------------|-------------------------------|-----------------------------------|
| **Package type** | TO263-7L | Efficient heat dissipation structure, suitable for high current applications|
| **Configuration** | Dual N-channel | Supports dual-channel control to improve integration|
| **V\(_{DS}\)** | 60V | Maximum voltage between drain and source|
| **V\(_{GS}\)** | ±20V | Maximum voltage between gate and source|
| **V\(_{th}\)** | 3V | Threshold voltage required for turn-on|
| **R\(_{DS(on)}\)** | 2mΩ @ V\(_{GS}\)=10V | On-resistance in the on state|
| **I\(_{D}\)** | 150A | Maximum continuous drain current|
| **Technology** | Trench | Provides low on-resistance and high performance|
| **Operating temperature range** | -55°C ~ 150°C | Supports stable operation in harsh environments|
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| **Parameter** | **Value** | **Description** |
|--------------------------|-------------------------------|-----------------------------------|
| **Package type** | TO263-7L | Efficient heat dissipation structure, suitable for high current applications|
| **Configuration** | Dual N-channel | Supports dual-channel control to improve integration|
| **V\(_{DS}\)** | 60V | Maximum voltage between drain and source|
| **V\(_{GS}\)** | ±20V | Maximum voltage between gate and source|
| **V\(_{th}\)** | 3V | Threshold voltage required for turn-on|
| **R\(_{DS(on)}\)** | 2mΩ @ V\(_{GS}\)=10V | On-resistance in the on state|
| **I\(_{D}\)** | 150A | Maximum continuous drain current|
| **Technology** | Trench | Provides low on-resistance and high performance|
| **Operating temperature range** | -55°C ~ 150°C | Supports stable operation in harsh environments|
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Domain and module applications：
3. Application fields and module examples
1. **Power conversion and management system**
NP160N055TUK-VB is suitable for high power management modules such as DC-DC converters and server power supplies. Its low on-resistance (2mΩ) can reduce conversion losses, improve power system efficiency, and excel in high current output applications.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In the battery management and drive system of electric vehicles, this MOSFET provides stable current conduction and efficient energy control. It plays a key role in the battery charging and discharging module, and can handle currents up to 150A to ensure system safety and efficiency.
3. **Motor drive and control module**
The dual-channel design of NP160N055TUK-VB makes it suitable for multi-phase DC motor and brushless motor drive control. Its excellent switching performance and high current handling capability make it widely used in robot control and industrial automation systems.
4. **Renewable Energy Systems**
In solar inverters and wind turbines, this MOSFET helps achieve efficient energy conversion. Its high temperature and high current resistance ensures reliable operation of the equipment in various environments.
5. **Consumer Electronics and Smart Devices**
The device is also suitable for power adapters, LED drivers, and power modules for gaming devices. Its high integration and excellent heat dissipation capabilities ensure the miniaturization of electronic products and long-term stable operation.
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NP160N055TUK-VB is a high-performance dual N-channel MOSFET suitable for a variety of power management and high current application scenarios. Its low on-resistance and high current handling capability make it an ideal choice for industrial and consumer electronics, supporting the efficient operation of modern power systems.
1. **Power conversion and management system**
NP160N055TUK-VB is suitable for high power management modules such as DC-DC converters and server power supplies. Its low on-resistance (2mΩ) can reduce conversion losses, improve power system efficiency, and excel in high current output applications.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In the battery management and drive system of electric vehicles, this MOSFET provides stable current conduction and efficient energy control. It plays a key role in the battery charging and discharging module, and can handle currents up to 150A to ensure system safety and efficiency.
3. **Motor drive and control module**
The dual-channel design of NP160N055TUK-VB makes it suitable for multi-phase DC motor and brushless motor drive control. Its excellent switching performance and high current handling capability make it widely used in robot control and industrial automation systems.
4. **Renewable Energy Systems**
In solar inverters and wind turbines, this MOSFET helps achieve efficient energy conversion. Its high temperature and high current resistance ensures reliable operation of the equipment in various environments.
5. **Consumer Electronics and Smart Devices**
The device is also suitable for power adapters, LED drivers, and power modules for gaming devices. Its high integration and excellent heat dissipation capabilities ensure the miniaturization of electronic products and long-term stable operation.
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NP160N055TUK-VB is a high-performance dual N-channel MOSFET suitable for a variety of power management and high current application scenarios. Its low on-resistance and high current handling capability make it an ideal choice for industrial and consumer electronics, supporting the efficient operation of modern power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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