中文
English
NP160N055TUJ-VB Product details
Back to previous pageProduct introduction：
1. NP160N055TUJ-VB Product Introduction
NP160N055TUJ-VB is a **Dual N+N-Channel MOSFET**, using **TO263-7L** package. Each N channel supports **60V** drain-source voltage (VDS) and has **±20V** gate-source voltage (VGS) range. The threshold voltage (Vth) of this MOSFET is **3V**, and the on-resistance (RDS(ON)) is only **2mΩ** when **VGS=10V**, with extremely low conduction loss. Its drain current (ID) is as high as **150A**, which is suitable for circuit design with high current density and low loss requirements. Due to the use of **Trench** technology, the device can effectively reduce resistance and power consumption, and is suitable for switching power supplies, power management modules, industrial drives and other fields. Its dual-channel design further improves the flexibility and integration of circuit design.
---
NP160N055TUJ-VB is a **Dual N+N-Channel MOSFET**, using **TO263-7L** package. Each N channel supports **60V** drain-source voltage (VDS) and has **±20V** gate-source voltage (VGS) range. The threshold voltage (Vth) of this MOSFET is **3V**, and the on-resistance (RDS(ON)) is only **2mΩ** when **VGS=10V**, with extremely low conduction loss. Its drain current (ID) is as high as **150A**, which is suitable for circuit design with high current density and low loss requirements. Due to the use of **Trench** technology, the device can effectively reduce resistance and power consumption, and is suitable for switching power supplies, power management modules, industrial drives and other fields. Its dual-channel design further improves the flexibility and integration of circuit design.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
2. NP160N055TUJ-VB Detailed parameter description
| **Parameter name** | **Specification** | **Description** |
|------------------------|------------------------------|----------------------------------------|
| **Model** | NP160N055TUJ-VB | |
| **Package type** | TO263-7L | 7-pin SMD package with good heat dissipation performance|
| **Configuration** | Dual N+N-Channel | Provides dual-channel N-channel configuration|
| **Drain-source voltage (VDS)** | 60V | Suitable for medium and high voltage applications|
| **Gate-source voltage (VGS)** | ±20V | Wide range of gate drive voltage|
| **Turning threshold voltage (Vth)** | 3V | Minimum voltage required for gate turn-on|
| **On-resistance (RDS(ON))** | 2mΩ @ VGS=10V | Low on-resistance, reduced conduction loss|
| **Drain current (ID)** | 150A | Single channel maximum current, suitable for high power applications|
| **Technology** | Trench | Provides lower loss and high performance|
---
| **Parameter name** | **Specification** | **Description** |
|------------------------|------------------------------|----------------------------------------|
| **Model** | NP160N055TUJ-VB | |
| **Package type** | TO263-7L | 7-pin SMD package with good heat dissipation performance|
| **Configuration** | Dual N+N-Channel | Provides dual-channel N-channel configuration|
| **Drain-source voltage (VDS)** | 60V | Suitable for medium and high voltage applications|
| **Gate-source voltage (VGS)** | ±20V | Wide range of gate drive voltage|
| **Turning threshold voltage (Vth)** | 3V | Minimum voltage required for gate turn-on|
| **On-resistance (RDS(ON))** | 2mΩ @ VGS=10V | Low on-resistance, reduced conduction loss|
| **Drain current (ID)** | 150A | Single channel maximum current, suitable for high power applications|
| **Technology** | Trench | Provides lower loss and high performance|
---
Domain and module applications：
3. Application fields and module examples
1. **Switch mode power supply (SMPS)**
NP160N055TUJ-VB is commonly used in **high power DC-DC converters** and **AC-DC power modules**. Low on-resistance and high current capability ensure stable power output under high efficiency conditions.
2. **Motor drive and industrial control**
In **motor control** systems, the dual N-channel design of this device can be used for **full bridge circuits** or **H-bridge circuits** to achieve bidirectional current control and precise motor drive. Its high current support is suitable for industrial robots and CNC controllers.
3. **Server and data center power management**
NP160N055TUJ-VB can handle high current demands and maintain low power consumption at high frequencies in **power modules in data centers**, making it very suitable for server power and load balancing systems.
4. **Battery Management System (BMS)**
This MOSFET can be used for **charge and discharge control of lithium battery packs**, providing low loss and high current paths to ensure safe and stable operation of the battery and extend battery life.
5. **Automotive Electronics and Charging Systems**
In **Electric Vehicles (EV)** and **Car Charging Stations**, this MOSFET can be applied to power control modules to ensure efficient conversion and low heat loss for high-power drive.
---
The dual-channel design of NP160N055TUJ-VB combines high current carrying capacity with low conduction loss, making it ideal for high-performance fields such as power conversion, industrial control and battery management. Its TO263-7L package reduces space occupancy while ensuring heat dissipation, making it an ideal choice for high-density circuit designs.
1. **Switch mode power supply (SMPS)**
NP160N055TUJ-VB is commonly used in **high power DC-DC converters** and **AC-DC power modules**. Low on-resistance and high current capability ensure stable power output under high efficiency conditions.
2. **Motor drive and industrial control**
In **motor control** systems, the dual N-channel design of this device can be used for **full bridge circuits** or **H-bridge circuits** to achieve bidirectional current control and precise motor drive. Its high current support is suitable for industrial robots and CNC controllers.
3. **Server and data center power management**
NP160N055TUJ-VB can handle high current demands and maintain low power consumption at high frequencies in **power modules in data centers**, making it very suitable for server power and load balancing systems.
4. **Battery Management System (BMS)**
This MOSFET can be used for **charge and discharge control of lithium battery packs**, providing low loss and high current paths to ensure safe and stable operation of the battery and extend battery life.
5. **Automotive Electronics and Charging Systems**
In **Electric Vehicles (EV)** and **Car Charging Stations**, this MOSFET can be applied to power control modules to ensure efficient conversion and low heat loss for high-power drive.
---
The dual-channel design of NP160N055TUJ-VB combines high current carrying capacity with low conduction loss, making it ideal for high-performance fields such as power conversion, industrial control and battery management. Its TO263-7L package reduces space occupancy while ensuring heat dissipation, making it an ideal choice for high-density circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
