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NP160N04TUK-VB Product details
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1. NP160N04TUK-VB Product Introduction
NP160N04TUK-VB is a **dual N-channel MOSFET** in a **TO-263-7L package**, designed to meet high current and high-efficiency switching needs. The device has a **drain-source voltage (VDS)** of **40V**, supports a gate-source voltage (VGS) of ±20V, and has a turn-on voltage (Vth) of 3V. Its on-resistance (RDS(ON)) is as low as **1mΩ** at **VGS = 10V**, achieving extremely low power consumption and higher efficiency in high-current applications. The **maximum drain current (ID)** of this MOSFET is up to **200A**, which is very suitable for high-power applications. NP160N04TUK-VB uses **Trench technology**, and its optimized structure ensures excellent thermal management and low loss performance, and is widely used in automotive, industrial and power management fields.
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NP160N04TUK-VB is a **dual N-channel MOSFET** in a **TO-263-7L package**, designed to meet high current and high-efficiency switching needs. The device has a **drain-source voltage (VDS)** of **40V**, supports a gate-source voltage (VGS) of ±20V, and has a turn-on voltage (Vth) of 3V. Its on-resistance (RDS(ON)) is as low as **1mΩ** at **VGS = 10V**, achieving extremely low power consumption and higher efficiency in high-current applications. The **maximum drain current (ID)** of this MOSFET is up to **200A**, which is very suitable for high-power applications. NP160N04TUK-VB uses **Trench technology**, and its optimized structure ensures excellent thermal management and low loss performance, and is widely used in automotive, industrial and power management fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
2. NP160N04TUK-VB Detailed parameter description
| **Parameter** | **Description** | **Value** |
|-------------------------|----------------------------------------|----------------------|
| **Package** | TO-263-7L | Optimized heat dissipation design|
| **Configuration** | Dual N-channel MOSFET | High-efficiency switching element|
| **Drain-source voltage (VDS)** | Maximum withstand voltage| 40V |
| **Gate-source voltage (VGS)** | Gate withstand voltage| ±20V |
| **Turning point voltage (Vth)** | Turn-on voltage| 3V |
| **On-resistance (RDS(ON))** | @ VGS = 10V | 1mΩ |
| **Maximum drain current (ID)** | Maximum continuous current| 200A |
| **Technology** | Trench technology | High-efficiency and low-loss design|
| **Operating Temperature Range** | Operating Temperature| -55°C to 175°C |
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| **Parameter** | **Description** | **Value** |
|-------------------------|----------------------------------------|----------------------|
| **Package** | TO-263-7L | Optimized heat dissipation design|
| **Configuration** | Dual N-channel MOSFET | High-efficiency switching element|
| **Drain-source voltage (VDS)** | Maximum withstand voltage| 40V |
| **Gate-source voltage (VGS)** | Gate withstand voltage| ±20V |
| **Turning point voltage (Vth)** | Turn-on voltage| 3V |
| **On-resistance (RDS(ON))** | @ VGS = 10V | 1mΩ |
| **Maximum drain current (ID)** | Maximum continuous current| 200A |
| **Technology** | Trench technology | High-efficiency and low-loss design|
| **Operating Temperature Range** | Operating Temperature| -55°C to 175°C |
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Domain and module applications：
III. Application fields and module examples
1. **Automotive electrical systems and battery management**
In **Electric Vehicles (EV)** and **Hybrid Electric Vehicles (HEV)**, NP160N04TUK-VB can be used for **Battery Management Systems (BMS)** and **Motor Controllers**. Its ultra-low on-resistance ensures the efficiency of high current transmission, effectively reduces energy loss, and improves vehicle endurance.
2. **DC-DC Converters and Power Management**
This MOSFET is widely used in **High-efficiency DC-DC Converters**, which can achieve fast switching operations and support high-power output in small power modules, making it an ideal choice for server and data center power modules.
3. **Industrial Automation Equipment and Motor Drive**
In the field of **Industrial Automation**, this device can be used as the main switching element of the motor driver to efficiently drive high-power motors, support continuous operation of industrial production lines, and ensure system reliability.
4. **Photovoltaic and wind power inverters**
NP160N04TUK-VB is suitable for **solar inverters** and **wind power generation systems**, where the MOSFET can achieve efficient energy transmission and reduce losses to improve the conversion efficiency of the system.
5. **Uninterruptible power supply (UPS)**
The device also has important applications in **UPS systems**. Its high current handling capability ensures stable power supply to the load when the mains power is interrupted, and is suitable for power protection of data centers and critical equipment.
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NP160N04TUK-VB performs well in automotive, industrial and power management fields with its high current carrying capacity, extremely low on-resistance and efficient heat dissipation design. The device is an ideal choice for high-power, high-efficiency applications, ensuring stable and reliable operation of the system under various harsh conditions.
1. **Automotive electrical systems and battery management**
In **Electric Vehicles (EV)** and **Hybrid Electric Vehicles (HEV)**, NP160N04TUK-VB can be used for **Battery Management Systems (BMS)** and **Motor Controllers**. Its ultra-low on-resistance ensures the efficiency of high current transmission, effectively reduces energy loss, and improves vehicle endurance.
2. **DC-DC Converters and Power Management**
This MOSFET is widely used in **High-efficiency DC-DC Converters**, which can achieve fast switching operations and support high-power output in small power modules, making it an ideal choice for server and data center power modules.
3. **Industrial Automation Equipment and Motor Drive**
In the field of **Industrial Automation**, this device can be used as the main switching element of the motor driver to efficiently drive high-power motors, support continuous operation of industrial production lines, and ensure system reliability.
4. **Photovoltaic and wind power inverters**
NP160N04TUK-VB is suitable for **solar inverters** and **wind power generation systems**, where the MOSFET can achieve efficient energy transmission and reduce losses to improve the conversion efficiency of the system.
5. **Uninterruptible power supply (UPS)**
The device also has important applications in **UPS systems**. Its high current handling capability ensures stable power supply to the load when the mains power is interrupted, and is suitable for power protection of data centers and critical equipment.
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NP160N04TUK-VB performs well in automotive, industrial and power management fields with its high current carrying capacity, extremely low on-resistance and efficient heat dissipation design. The device is an ideal choice for high-power, high-efficiency applications, ensuring stable and reliable operation of the system under various harsh conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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