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NP160N04TUJ-VB Product details
Back to previous pageProduct introduction：
The NP160N04TUJ-VB is a high-performance dual N-channel MOSFET in a TO263-7L package with two independent N-channel configurations. The device supports a drain-source voltage (V\(_{DS}\)** of 40V and a gate-source voltage (V\(_{GS}\)** of ±20V, with a threshold voltage (V\(_{th}\)** of 3V, ensuring fast turn-on and stable performance under high load current conditions. The on-resistance of the MOSFET is as low as 1mΩ at a gate drive voltage of **10V**, suitable for applications requiring extremely low power consumption and high efficiency.
The NP160N04TUJ-VB uses advanced **Trench technology** and supports a continuous drain current of **200A**, making it ideal for high current transmission and power management applications. The TO263-7L package provides good heat dissipation, enabling reliable operation in high-power modules.
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## 2. NP160N04TUJ-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
| **Parameter** | **Value** | **Description** |
|---------------------|---------------------------------|-----------------------------------------------|
| **Package Type** | TO263-7L | Compact, high-power package for high-current applications|
| **Configuration** | Dual-N+N-Channel | Two independent N-channel MOSFETs, supporting parallel or independent control|
| **V\(_{DS}\)** | 40V | Maximum drain-source voltage for medium-voltage applications|
| **V\(_{GS}\)** | ±20V | Gate-source voltage range for enhanced design flexibility|
| **V\(_{th}\)** | 3V | Threshold voltage for fast response|
| **R\(_{DS(ON)}\)** | 1mΩ (@V\(_{GS}\) = 10V) | Extremely low on-resistance, reducing power loss|
| **I\(_D\)** | 200A | Maximum continuous drain current, supporting high load operation|
| **Technology** | Trench | Providing high efficiency turn-on and fast switching performance|
| **Operating temperature range** | -55°C ~ +175°C | Suitable for harsh industrial and automotive environments|
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## III. NP160N04TUJ-VB
Domain and module applications：
1. **Electric Vehicles and Hybrid Electric Vehicles (EV/HEV)**
- NP160N04TUJ-VB is ideal for **motor drives** and **battery management systems**. Its low on-resistance and high current capability ensure high efficiency in power management and reduce energy loss during charging and discharging.
2. **Server Power and Data Center**
- In **server power modules**, this MOSFET can effectively reduce power consumption, reduce power conversion losses, improve system energy efficiency, and meet the needs of data centers for efficient power management.
3. **Industrial Automation Equipment and Inverters**
- NP160N04TUJ-VB performs well in **industrial inverter** and **variable frequency drive** systems, and can withstand high current and high-frequency switching, which helps to improve the response speed and operation reliability of automation equipment.
4. **Consumer Electronics and Home Appliances**
- In **LED drive circuits** and **smart appliances**, this MOSFET provides fast switching capabilities while ensuring efficient power control, extending device life and reducing power consumption.
5. **Solar Energy and Energy Storage Systems**
- As a key component in **photovoltaic inverters** and **energy storage systems**, the NP160N04TUJ-VB optimizes energy transfer efficiency and ensures efficient operation of batteries and solar modules.
With its excellent performance, low on-resistance, high current carrying capability and excellent heat dissipation, the NP160N04TUJ-VB is an ideal choice for efficient power management and high current load applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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