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NP160N04TUG-VB Product details
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NP160N04TUG-VB Product Introduction
NP160N04TUG-VB is a **dual N+N channel MOSFET** in TO263-7L package, designed for high current, low on-resistance applications. Its drain-source voltage (VDS) is 40V, and the gate-source voltage (VGS) can reach up to ±20V, ensuring stable operation over a wide voltage range. Its key feature is its extremely low on-resistance of only 1mΩ@VGS=10V, supporting currents up to 200A, ensuring low power consumption and efficient transmission during switching. This MOSFET is suitable for applications requiring high power handling and fast switching, such as power management systems, electric vehicles, data centers, and motor control modules.
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NP160N04TUG-VB is a **dual N+N channel MOSFET** in TO263-7L package, designed for high current, low on-resistance applications. Its drain-source voltage (VDS) is 40V, and the gate-source voltage (VGS) can reach up to ±20V, ensuring stable operation over a wide voltage range. Its key feature is its extremely low on-resistance of only 1mΩ@VGS=10V, supporting currents up to 200A, ensuring low power consumption and efficient transmission during switching. This MOSFET is suitable for applications requiring high power handling and fast switching, such as power management systems, electric vehicles, data centers, and motor control modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
NP160N04TUG-VB Detailed parameter description
| **Parameter** | **Description** |
|------------------------|----------------------------------|
| **Model** | NP160N04TUG-VB |
| **Package** | TO263-7L |
| **Configuration** | Dual N+N channel|
| **Maximum drain-source voltage (VDS)** | 40V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 1mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 200A |
| **Technology** | Trench |
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| **Parameter** | **Description** |
|------------------------|----------------------------------|
| **Model** | NP160N04TUG-VB |
| **Package** | TO263-7L |
| **Configuration** | Dual N+N channel|
| **Maximum drain-source voltage (VDS)** | 40V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 1mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 200A |
| **Technology** | Trench |
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Domain and module applications：
Applications and module examples
1. **Power management and DC-DC converters**:
NP160N04TUG-VB is widely used in **high-efficiency DC-DC converters** due to its extremely low on-resistance and high current carrying capacity. The power consumption generated during the switching process is very low, which helps to improve conversion efficiency and reduce heat dissipation. It is suitable for power management modules of notebook computers, servers and consumer electronics.
2. **Electric vehicles and hybrid systems**:
In **electric vehicles (EV) and hybrid vehicles (HEV), this MOSFET is used for **battery management system (BMS)** and drive system control to ensure safe and efficient battery charging and discharging. In addition, it also supports high current applications such as traction inverters and charging piles.
3. **Motor drive and industrial automation**:
NP160N04TUG-VB is used in industrial control systems to drive various types of motors, such as stepper motors and brushless DC motors. Its **dual N-channel configuration** provides flexible current control and is suitable for motor drive applications that require bidirectional switching.
4. **Data Center Power Distribution Unit (PDU)**:
In data center environments, this MOSFET is used in power management and distribution systems to improve module conversion efficiency and reduce system power consumption and cooling requirements. The high current support makes it suitable for power modules for large servers and network equipment.
5. **Photovoltaic Inverters and Renewable Energy**:
NP160N04TUG-VB can be used as an efficient switch in **solar inverters** to help achieve efficient energy conversion and management and improve the overall performance of the system. Its low loss characteristics also make it an excellent application in wind power generation control systems.
6. **Smart Home and IoT Devices**:
In smart home applications, such as smart lighting controllers, home appliances, and energy management devices, this MOSFET can be used as an efficient switching element to enhance the response speed and reliability of the system and improve the intelligence level of the device.
NP160N04TUG-VB is an ideal choice for various high-power and high-frequency applications due to its high current carrying capacity, low on-resistance and efficient Trench technology.
1. **Power management and DC-DC converters**:
NP160N04TUG-VB is widely used in **high-efficiency DC-DC converters** due to its extremely low on-resistance and high current carrying capacity. The power consumption generated during the switching process is very low, which helps to improve conversion efficiency and reduce heat dissipation. It is suitable for power management modules of notebook computers, servers and consumer electronics.
2. **Electric vehicles and hybrid systems**:
In **electric vehicles (EV) and hybrid vehicles (HEV), this MOSFET is used for **battery management system (BMS)** and drive system control to ensure safe and efficient battery charging and discharging. In addition, it also supports high current applications such as traction inverters and charging piles.
3. **Motor drive and industrial automation**:
NP160N04TUG-VB is used in industrial control systems to drive various types of motors, such as stepper motors and brushless DC motors. Its **dual N-channel configuration** provides flexible current control and is suitable for motor drive applications that require bidirectional switching.
4. **Data Center Power Distribution Unit (PDU)**:
In data center environments, this MOSFET is used in power management and distribution systems to improve module conversion efficiency and reduce system power consumption and cooling requirements. The high current support makes it suitable for power modules for large servers and network equipment.
5. **Photovoltaic Inverters and Renewable Energy**:
NP160N04TUG-VB can be used as an efficient switch in **solar inverters** to help achieve efficient energy conversion and management and improve the overall performance of the system. Its low loss characteristics also make it an excellent application in wind power generation control systems.
6. **Smart Home and IoT Devices**:
In smart home applications, such as smart lighting controllers, home appliances, and energy management devices, this MOSFET can be used as an efficient switching element to enhance the response speed and reliability of the system and improve the intelligence level of the device.
NP160N04TUG-VB is an ideal choice for various high-power and high-frequency applications due to its high current carrying capacity, low on-resistance and efficient Trench technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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