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NP160N04TDG-VB Product details
Back to previous pageProduct introduction：
1. NP160N04TDG-VB Product Introduction
NP160N04TDG-VB is a **dual N-channel MOSFET** in **TO263-7L package**, suitable for high current and high efficiency power electronic systems. Its maximum drain-source voltage (VDS) is **40V**, and the gate-source voltage (VGS) range is **±20V**, enabling it to cope with complex power management and motor drive applications. The device has a turn-on voltage (Vth) of **3V** and achieves an ultra-low on-resistance (RDS(ON)) of **1mΩ** at a VGS of 10V. With a maximum drain current (ID) of **200A**, the NP160N04TDG-VB excels in high current transmission. Based on **Trench technology**, this MOSFET has excellent performance in conduction loss and thermal management, making it an ideal choice for the industrial and automotive fields.
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NP160N04TDG-VB is a **dual N-channel MOSFET** in **TO263-7L package**, suitable for high current and high efficiency power electronic systems. Its maximum drain-source voltage (VDS) is **40V**, and the gate-source voltage (VGS) range is **±20V**, enabling it to cope with complex power management and motor drive applications. The device has a turn-on voltage (Vth) of **3V** and achieves an ultra-low on-resistance (RDS(ON)) of **1mΩ** at a VGS of 10V. With a maximum drain current (ID) of **200A**, the NP160N04TDG-VB excels in high current transmission. Based on **Trench technology**, this MOSFET has excellent performance in conduction loss and thermal management, making it an ideal choice for the industrial and automotive fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
2. NP160N04TDG-VB Detailed Parameters
| **Parameter** | **Value** | **Description** |
|------------------------|-----------------------|-------------------------------------------|
| **Package Type** | TO263-7L | Provides good heat dissipation performance and is suitable for surface mount applications. |
| **MOSFET Configuration** | Dual N-channel | Supports dual-path control and is suitable for complex power applications. |
| **Drain-Source Voltage (VDS)** | 40V | Suitable for medium voltage applications such as motor control and battery management. |
| **Gate-Source Voltage (VGS)** | ±20V | Supports a wider control voltage range for increased flexibility. |
| **Turning Voltage (Vth)** | 3V | Stable operation under common drive voltages. |
| **On-Resistance (RDS(ON))** | 1mΩ @ VGS=10V | Ultra-low resistance ensures high efficiency and reduces losses and heat generation. |
| **Drain Current (ID)** | 200A | Supports high current loads and is suitable for high power applications. |
| **Technology Type** | Trench | Optimizes switching speed and heat dissipation to reduce power consumption. |
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| **Parameter** | **Value** | **Description** |
|------------------------|-----------------------|-------------------------------------------|
| **Package Type** | TO263-7L | Provides good heat dissipation performance and is suitable for surface mount applications. |
| **MOSFET Configuration** | Dual N-channel | Supports dual-path control and is suitable for complex power applications. |
| **Drain-Source Voltage (VDS)** | 40V | Suitable for medium voltage applications such as motor control and battery management. |
| **Gate-Source Voltage (VGS)** | ±20V | Supports a wider control voltage range for increased flexibility. |
| **Turning Voltage (Vth)** | 3V | Stable operation under common drive voltages. |
| **On-Resistance (RDS(ON))** | 1mΩ @ VGS=10V | Ultra-low resistance ensures high efficiency and reduces losses and heat generation. |
| **Drain Current (ID)** | 200A | Supports high current loads and is suitable for high power applications. |
| **Technology Type** | Trench | Optimizes switching speed and heat dissipation to reduce power consumption. |
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Domain and module applications：
III. Application Fields and Module Examples
1. **Motor Control Systems**:
NP160N04TDG-VB is ideal for motor drive modules, such as **industrial automation equipment** and **motor control units for electric vehicles**. Its ultra-low on-resistance and high current carrying capacity ensure high efficiency and stability during motor operation, reduce energy consumption and extend equipment life.
2. **Battery Management Systems (BMS)**:
In **electric vehicles** and **energy storage systems**, NP160N04TDG-VB is used for efficient charge and discharge control. Its dual N-channel configuration enables it to handle multiple battery modules simultaneously, improve the overall energy efficiency of the system and optimize energy transfer.
3. **DC-DC Converters**:
This device can be used in **high-power DC-DC converters**, and its ultra-low on-resistance effectively reduces losses when large currents are transmitted, ensuring efficient operation of the converter. Suitable for power modules in the fields of telecommunications, servers and data centers.
4. **Photovoltaic Inverters and EV Chargers**:
In **photovoltaic power generation systems** and **electric vehicle charging piles**, this MOSFET can be used in the power conversion part to ensure that the system remains stable and efficient when running at high currents, supporting fast charging and efficient energy conversion.
5. **High-power switching power supply (SMPS)**:
NP160N04TDG-VB is suitable for **industrial power supplies** and **high-power power adapters**. Its high current carrying capacity enables it to handle large loads, ensure the stability of the power supply and reduce heat generation, improving system reliability.
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NP160N04TDG-VB is a high-performance dual N-channel MOSFET, which is widely used in motor control, battery management, DC-DC conversion, photovoltaic systems and high-power power modules for its ultra-low on-resistance, strong current carrying capacity and efficient Trench technology. This device helps the system achieve efficient and stable energy management in a high power density environment, and is an important part of the modern power electronics field.
1. **Motor Control Systems**:
NP160N04TDG-VB is ideal for motor drive modules, such as **industrial automation equipment** and **motor control units for electric vehicles**. Its ultra-low on-resistance and high current carrying capacity ensure high efficiency and stability during motor operation, reduce energy consumption and extend equipment life.
2. **Battery Management Systems (BMS)**:
In **electric vehicles** and **energy storage systems**, NP160N04TDG-VB is used for efficient charge and discharge control. Its dual N-channel configuration enables it to handle multiple battery modules simultaneously, improve the overall energy efficiency of the system and optimize energy transfer.
3. **DC-DC Converters**:
This device can be used in **high-power DC-DC converters**, and its ultra-low on-resistance effectively reduces losses when large currents are transmitted, ensuring efficient operation of the converter. Suitable for power modules in the fields of telecommunications, servers and data centers.
4. **Photovoltaic Inverters and EV Chargers**:
In **photovoltaic power generation systems** and **electric vehicle charging piles**, this MOSFET can be used in the power conversion part to ensure that the system remains stable and efficient when running at high currents, supporting fast charging and efficient energy conversion.
5. **High-power switching power supply (SMPS)**:
NP160N04TDG-VB is suitable for **industrial power supplies** and **high-power power adapters**. Its high current carrying capacity enables it to handle large loads, ensure the stability of the power supply and reduce heat generation, improving system reliability.
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NP160N04TDG-VB is a high-performance dual N-channel MOSFET, which is widely used in motor control, battery management, DC-DC conversion, photovoltaic systems and high-power power modules for its ultra-low on-resistance, strong current carrying capacity and efficient Trench technology. This device helps the system achieve efficient and stable energy management in a high power density environment, and is an important part of the modern power electronics field.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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