NP15P06SLG-VB Product details
Product introduction:
NP15P06SLG-VB is a high-efficiency **P-channel power MOSFET**, using **TO252 package**, designed for load switching and power management applications. Its **drain-source voltage (VDS)** can reach **-60V**, suitable for use in high-voltage circuits. The **gate-source voltage (VGS)** range of this device is **±20V**, which can adapt to a variety of driving conditions. **The turn-on threshold voltage (Vth)** is **-1.7V**, ensuring that it can be reliably turned on at the appropriate voltage. The **on resistance (RDS(ON))** of NP15P06SLG-VB is 58mΩ** at **VGS=4.5V, and is reduced to 46mΩ** at **VGS=10V, significantly reducing power loss. The maximum **drain current (ID)** is **-35A**, providing good support for high current loads. This MOSFET adopts **Trench technology**, which excels in switching performance and thermal management and is suitable for a wide range of power control and drive applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | 46mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
| **Parameter name** | **Parameter value** | **Description** |
|-----------------------|--------------------------|----------------------------------|
| **Package type** | TO252 | Compact surface mount package|
| **Configuration** | Single P-channel | Unipolar design for negative conduction|
| **Drain-source voltage (VDS)** | -60V | Suitable for high voltage circuit applications|
| **Gate-source voltage (VGS)** | ±20V | Wide driving voltage range|
| **Turning threshold voltage (Vth)** | -1.7V | Reliable conduction at voltages above -1.7V|
| **On-resistance (RDS(ON))** | 58mΩ @ VGS=4.5V | Resistance value at lower gate voltage|
| **On-resistance (RDS(ON))** | 46mΩ @ VGS=10V | Resistance value at higher gate voltage|
| **Drain current (ID)** | -35A | Supports larger load current|
| **Process technology** | Trench | Provides low loss and fast switching characteristics|
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Domain and module applications:
1. **Power management system**
NP15P06SLG-VB can be used for power switching and current control in **power management systems**, helping to improve overall system efficiency, especially in switch mode power supplies (SMPS) and DC-DC converters.
2. **Electric vehicles and hybrid vehicles**
In **Electric vehicles (EV)** and **Hybrid vehicles (HEV)**, this MOSFET can be used in battery management systems to achieve precise control of battery charging and discharging, ensuring efficient use and safety of electrical energy.
3. **LED lighting driver**
NP15P06SLG-VB is widely used in **LED lighting driver**, providing stable current to ensure uniform brightness and long life of LED lamps, especially in high-power LED applications.
4. **Industrial Automation and Control**
In **Industrial Automation**, the device can be used to control motors and other loads, ensuring reliable switching operations and efficient energy use, especially in applications that require frequent switching.
5. **Home Appliances and Consumer Electronics**
NP15P06SLG-VB is suitable for power switches in **home appliances and consumer electronics** products, such as power adapters and chargers, helping to achieve miniaturization and high-efficiency designs.
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Technical support:
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