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NP110N055PUJ-VB Product details
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1. NP110N055PUJ-VB Product Introduction
NP110N055PUJ-VB is a high-performance **N-channel power MOSFET**, which adopts **TO263** package and is designed for power management and load control applications that require high current and high efficiency. The **drain-source voltage (VDS)** of this device can reach **60V** at most, and supports **gate-source voltage (VGS)** ±20V, which can adapt to a variety of industrial and consumer electronics application environments. Its **turn-on voltage (Vth)** is **3V**, and the **on-resistance (RDS(ON))** at **VGS=10V** is only **2.5mΩ**, and the **on-resistance at **VGS=4.5V** is **7mΩ**, which makes it have excellent conduction efficiency and extremely low energy loss. Combined with the Trench Technology design, the NP110N055PUJ-VB provides excellent thermal management performance and stability, and its maximum continuous drain current (ID) is up to 270A, which is very suitable for high power applications.
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NP110N055PUJ-VB is a high-performance **N-channel power MOSFET**, which adopts **TO263** package and is designed for power management and load control applications that require high current and high efficiency. The **drain-source voltage (VDS)** of this device can reach **60V** at most, and supports **gate-source voltage (VGS)** ±20V, which can adapt to a variety of industrial and consumer electronics application environments. Its **turn-on voltage (Vth)** is **3V**, and the **on-resistance (RDS(ON))** at **VGS=10V** is only **2.5mΩ**, and the **on-resistance at **VGS=4.5V** is **7mΩ**, which makes it have excellent conduction efficiency and extremely low energy loss. Combined with the Trench Technology design, the NP110N055PUJ-VB provides excellent thermal management performance and stability, and its maximum continuous drain current (ID) is up to 270A, which is very suitable for high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | 2.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. NP110N055PUJ-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|-----------------------|--------------------------|----------------------------------------------------|
| **Package** | TO263 | SMD package suitable for high power applications with good heat dissipation characteristics. |
| **Configuration** | Single-N-Channel | Single N-channel MOSFET, suitable for various power management and load control applications. |
| **Drain-Source Voltage (VDS)** | 60V | Maximum drain-source voltage, suitable for low-voltage to medium-voltage application environments. |
| **Gate-Source Voltage (VGS)** | ±20V | Maximum gate voltage, adapting to the design requirements of different control circuits. |
| **Turning Voltage (Vth)** | 3V | Moderate threshold voltage to ensure reliable conduction in low-voltage systems. |
| **On-resistance (RDS(ON))** | 7mΩ @ VGS=4.5V | On-resistance at 4.5V gate voltage, suitable for medium current load applications. |
| | 2.5mΩ @ VGS=10V | On-resistance at 10V gate voltage, supports high current applications. |
| **Drain current (ID)** | 270A | Supports high current transmission, suitable for high power applications. |
| **Technology** | Trench | Trench technology provides high efficiency, low loss and good thermal management. |
| **Operating temperature range** | -55°C ~ +150°C | Supports wide temperature working environment, suitable for industrial and outdoor applications. |
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| **Parameter** | **Value** | **Description** |
|-----------------------|--------------------------|----------------------------------------------------|
| **Package** | TO263 | SMD package suitable for high power applications with good heat dissipation characteristics. |
| **Configuration** | Single-N-Channel | Single N-channel MOSFET, suitable for various power management and load control applications. |
| **Drain-Source Voltage (VDS)** | 60V | Maximum drain-source voltage, suitable for low-voltage to medium-voltage application environments. |
| **Gate-Source Voltage (VGS)** | ±20V | Maximum gate voltage, adapting to the design requirements of different control circuits. |
| **Turning Voltage (Vth)** | 3V | Moderate threshold voltage to ensure reliable conduction in low-voltage systems. |
| **On-resistance (RDS(ON))** | 7mΩ @ VGS=4.5V | On-resistance at 4.5V gate voltage, suitable for medium current load applications. |
| | 2.5mΩ @ VGS=10V | On-resistance at 10V gate voltage, supports high current applications. |
| **Drain current (ID)** | 270A | Supports high current transmission, suitable for high power applications. |
| **Technology** | Trench | Trench technology provides high efficiency, low loss and good thermal management. |
| **Operating temperature range** | -55°C ~ +150°C | Supports wide temperature working environment, suitable for industrial and outdoor applications. |
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Domain and module applications：
3. Applications and module examples
1. **Switching Power Supply**
NP110N055PUJ-VB is very suitable for use as the main switching device in a switching power supply, providing a high-efficiency and low-energy solution.
**Example:** Used in high-efficiency **AC-DC converter** and **DC-DC converter** to improve overall conversion efficiency and reduce power consumption.
2. **Motor Control**
This MOSFET can be used to drive motors, supporting high current and fast switching capabilities to ensure efficient operation of motor control systems.
**Example:** Used in motor control modules for **power tools** and **electric vehicles** to achieve high efficiency of brushless motors (BLDC).
3. **Load Switching**
The low on-resistance and high current capability of NP110N055PUJ-VB make it an ideal load switch in power path control.
**Example:** In **industrial automation** equipment, it is used to dynamically switch different power paths to ensure stable operation of the system.
4. **Battery Management System (BMS)**
In the battery management system, this MOSFET can be used to control the charge and discharge paths to ensure efficient and safe energy transmission.
**Example:** In **electric vehicles** and **energy storage systems**, it is used for battery charge and discharge management to ensure safe and effective use of batteries.
5. **Power Distribution Module**
NP110N055PUJ-VB is suitable for power distribution modules, supporting dynamic management of multiple loads and improving the overall performance and efficiency of the system.
**Example:** In the power management of **data centers**, it is used to dynamically dispatch power to ensure efficient and stable operation of equipment.
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NP110N055PUJ-VB is a high-performance N-channel power MOSFET. Its low conduction loss, high current capability and excellent thermal management performance make it widely used in power management, motor control and load switching. With its TO263 package and advanced trench technology, the device can meet the requirements of modern electronic systems for high efficiency and reliability.
1. **Switching Power Supply**
NP110N055PUJ-VB is very suitable for use as the main switching device in a switching power supply, providing a high-efficiency and low-energy solution.
**Example:** Used in high-efficiency **AC-DC converter** and **DC-DC converter** to improve overall conversion efficiency and reduce power consumption.
2. **Motor Control**
This MOSFET can be used to drive motors, supporting high current and fast switching capabilities to ensure efficient operation of motor control systems.
**Example:** Used in motor control modules for **power tools** and **electric vehicles** to achieve high efficiency of brushless motors (BLDC).
3. **Load Switching**
The low on-resistance and high current capability of NP110N055PUJ-VB make it an ideal load switch in power path control.
**Example:** In **industrial automation** equipment, it is used to dynamically switch different power paths to ensure stable operation of the system.
4. **Battery Management System (BMS)**
In the battery management system, this MOSFET can be used to control the charge and discharge paths to ensure efficient and safe energy transmission.
**Example:** In **electric vehicles** and **energy storage systems**, it is used for battery charge and discharge management to ensure safe and effective use of batteries.
5. **Power Distribution Module**
NP110N055PUJ-VB is suitable for power distribution modules, supporting dynamic management of multiple loads and improving the overall performance and efficiency of the system.
**Example:** In the power management of **data centers**, it is used to dynamically dispatch power to ensure efficient and stable operation of equipment.
---
NP110N055PUJ-VB is a high-performance N-channel power MOSFET. Its low conduction loss, high current capability and excellent thermal management performance make it widely used in power management, motor control and load switching. With its TO263 package and advanced trench technology, the device can meet the requirements of modern electronic systems for high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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