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NP110N055PUJ-E2B-AY-VB Product details
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1. NP110N055PUJ-E2B-AY-VB Product Introduction
NP110N055PUJ-E2B-AY-VB is a high-performance single N-channel MOSFET in TO263 package, specially designed for high current and high efficiency applications. Its maximum drain-source voltage (V\(_{DS}\)) is 60V, and the gate voltage (V\(_{GS}\)) can reach ±20V, which is suitable for a wide range of power management systems. The threshold voltage (V\(_{th}\)) of the device is 3V, which can be turned on quickly at a higher gate voltage. Its on-resistance (R\(_{DS(on)}\)) is only 2.5mΩ when V\(_{GS}\) is 10V, showing excellent current conduction capability, and the maximum drain current (I\(_{D}\)) can reach 270A. Using advanced Trench technology, NP110N055PUJ-E2B-AY-VB provides extremely high power efficiency and thermal management performance, making it an ideal choice for power conversion, drive and control systems.
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NP110N055PUJ-E2B-AY-VB is a high-performance single N-channel MOSFET in TO263 package, specially designed for high current and high efficiency applications. Its maximum drain-source voltage (V\(_{DS}\)) is 60V, and the gate voltage (V\(_{GS}\)) can reach ±20V, which is suitable for a wide range of power management systems. The threshold voltage (V\(_{th}\)) of the device is 3V, which can be turned on quickly at a higher gate voltage. Its on-resistance (R\(_{DS(on)}\)) is only 2.5mΩ when V\(_{GS}\) is 10V, showing excellent current conduction capability, and the maximum drain current (I\(_{D}\)) can reach 270A. Using advanced Trench technology, NP110N055PUJ-E2B-AY-VB provides extremely high power efficiency and thermal management performance, making it an ideal choice for power conversion, drive and control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | 2.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. NP110N055PUJ-E2B-AY-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-----------------------------|-------------------------------|-----------------------------------|
| **Package type** | TO263 | Compact package for easy heat dissipation and installation|
| **Configuration** | Single N-channel | Unidirectional current control|
| **V\(_{DS}\)** | 60V | Maximum voltage between drain and source|
| **V\(_{GS}\)** | ±20V | Maximum voltage between gate and source|
| **V\(_{th}\)** | 3V | Minimum gate voltage required to turn on|
| **R\(_{DS(on)}\)** | 7mΩ @ V\(_{GS}\)=4.5V | On-resistance at specific gate voltage|
| **R\(_{DS(on)}\)** | 2.5mΩ @ V\(_{GS}\)=10V | On-resistance at higher gate voltage|
| **I\(_{D}\)** | 270A | Maximum continuous drain current|
| **Technology** | Trench | Provides high efficiency and low on-resistance|
| **Operating temperature range** | -55°C ~ 150°C | Wide operating environment adaptability|
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| **Parameter** | **Value** | **Description** |
|-----------------------------|-------------------------------|-----------------------------------|
| **Package type** | TO263 | Compact package for easy heat dissipation and installation|
| **Configuration** | Single N-channel | Unidirectional current control|
| **V\(_{DS}\)** | 60V | Maximum voltage between drain and source|
| **V\(_{GS}\)** | ±20V | Maximum voltage between gate and source|
| **V\(_{th}\)** | 3V | Minimum gate voltage required to turn on|
| **R\(_{DS(on)}\)** | 7mΩ @ V\(_{GS}\)=4.5V | On-resistance at specific gate voltage|
| **R\(_{DS(on)}\)** | 2.5mΩ @ V\(_{GS}\)=10V | On-resistance at higher gate voltage|
| **I\(_{D}\)** | 270A | Maximum continuous drain current|
| **Technology** | Trench | Provides high efficiency and low on-resistance|
| **Operating temperature range** | -55°C ~ 150°C | Wide operating environment adaptability|
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Domain and module applications：
3. Applicable fields and module applications
1. **High-power power management system**
NP110N055PUJ-E2B-AY-VB is suitable for power management systems such as high-power power converters, DC-DC converters and AC-DC adapters. Its high drain current capability of 270A and low on-resistance ensure high efficiency and low heat loss under high load conditions, improving the overall performance of the power supply.
2. **Motor drive and control module**
In motor control applications, this MOSFET can be used as a high-side or low-side switch to drive DC motors, stepper motors and brushless motors. Its excellent current handling capability and fast switching characteristics make motor control more efficient and suitable for the fields of industrial automation and robotics.
3. **Electric vehicles (EV) and hybrid electric vehicles (HEV)**
NP110N055PUJ-E2B-AY-VB is an ideal choice for battery management systems and charging modules in electric and hybrid vehicles. Its high withstand voltage and high current carrying capacity can effectively handle the battery charging and discharging process, ensuring safe and efficient energy management.
4. **Renewable Energy Systems**
This device is widely used in photovoltaic inverters and wind energy conversion systems. The high efficiency and durability of NP110N055PUJ-E2B-AY-VB enable it to work stably under extreme conditions, ensuring the effectiveness of energy conversion.
5. **Consumer Electronics**
NP110N055PUJ-E2B-AY-VB is also suitable for various consumer electronics products, such as computer power supplies and LED drivers. Its small package and excellent performance enable it to meet the strict requirements of modern electronic products for space and energy efficiency.
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In summary, NP110N055PUJ-E2B-AY-VB is an efficient and reliable MOSFET suitable for a variety of power management and control applications, and can provide superior performance in various environments.
1. **High-power power management system**
NP110N055PUJ-E2B-AY-VB is suitable for power management systems such as high-power power converters, DC-DC converters and AC-DC adapters. Its high drain current capability of 270A and low on-resistance ensure high efficiency and low heat loss under high load conditions, improving the overall performance of the power supply.
2. **Motor drive and control module**
In motor control applications, this MOSFET can be used as a high-side or low-side switch to drive DC motors, stepper motors and brushless motors. Its excellent current handling capability and fast switching characteristics make motor control more efficient and suitable for the fields of industrial automation and robotics.
3. **Electric vehicles (EV) and hybrid electric vehicles (HEV)**
NP110N055PUJ-E2B-AY-VB is an ideal choice for battery management systems and charging modules in electric and hybrid vehicles. Its high withstand voltage and high current carrying capacity can effectively handle the battery charging and discharging process, ensuring safe and efficient energy management.
4. **Renewable Energy Systems**
This device is widely used in photovoltaic inverters and wind energy conversion systems. The high efficiency and durability of NP110N055PUJ-E2B-AY-VB enable it to work stably under extreme conditions, ensuring the effectiveness of energy conversion.
5. **Consumer Electronics**
NP110N055PUJ-E2B-AY-VB is also suitable for various consumer electronics products, such as computer power supplies and LED drivers. Its small package and excellent performance enable it to meet the strict requirements of modern electronic products for space and energy efficiency.
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In summary, NP110N055PUJ-E2B-AY-VB is an efficient and reliable MOSFET suitable for a variety of power management and control applications, and can provide superior performance in various environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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