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NP110N055PUJ-E1B-AY-VB Product details
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1. NP110N055PUJ-E1B-AY-VB Product Introduction
NP110N055PUJ-E1B-AY-VB is a high-performance **N-channel MOSFET**, using **TO263** package, supporting **60V** drain-source voltage (VDS). The device has **±20V** gate-source voltage (VGS) range and **3V** turn-on threshold voltage (Vth), suitable for high-efficiency switching applications. Its on-resistance (RDS(ON)) is **7mΩ** at **VGS=4.5V**, and drops to **2.5mΩ** at **VGS=10V**, which enables NP110N055PUJ-E1B-AY-VB to still provide excellent conduction performance under low power consumption conditions. In addition, the device supports a maximum drain current (ID) of **270A** and is designed with **Trench** technology, which has good thermal management performance and low conduction loss, making it suitable for high current density applications. NP110N055PUJ-E1B-AY-VB is very suitable for power conversion, industrial control and high-efficiency power modules.
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NP110N055PUJ-E1B-AY-VB is a high-performance **N-channel MOSFET**, using **TO263** package, supporting **60V** drain-source voltage (VDS). The device has **±20V** gate-source voltage (VGS) range and **3V** turn-on threshold voltage (Vth), suitable for high-efficiency switching applications. Its on-resistance (RDS(ON)) is **7mΩ** at **VGS=4.5V**, and drops to **2.5mΩ** at **VGS=10V**, which enables NP110N055PUJ-E1B-AY-VB to still provide excellent conduction performance under low power consumption conditions. In addition, the device supports a maximum drain current (ID) of **270A** and is designed with **Trench** technology, which has good thermal management performance and low conduction loss, making it suitable for high current density applications. NP110N055PUJ-E1B-AY-VB is very suitable for power conversion, industrial control and high-efficiency power modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | 2.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description
| **Parameter name** | **Specification** | **Description** |
|----------------------|------------------------------|----------------------------------------------|
| **Model** | NP110N055PUJ-E1B-AY-VB | |
| **Package type** | TO263 | Compact package, suitable for high power applications|
| **Configuration** | Single N-channel | Suitable for unidirectional current control|
| **Drain-source voltage (VDS)** | 60V | Suitable for high voltage circuits|
| **Gate-source voltage (VGS)** | ±20V | Enhanced driving flexibility|
| **Turning threshold voltage (Vth)** | 3V | Minimum gate drive voltage|
| **On-resistance (RDS(ON))** | 7mΩ @ VGS=4.5V | Low on-resistance, suitable for high performance applications|
| | 2.5mΩ @ VGS=10V | Lower on-resistance at higher gate voltage|
| **Drain Current (ID)** | 270A | Maximum drain current for high power requirements|
| **Technology** | Trench | Provides low loss and high performance|
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| **Parameter name** | **Specification** | **Description** |
|----------------------|------------------------------|----------------------------------------------|
| **Model** | NP110N055PUJ-E1B-AY-VB | |
| **Package type** | TO263 | Compact package, suitable for high power applications|
| **Configuration** | Single N-channel | Suitable for unidirectional current control|
| **Drain-source voltage (VDS)** | 60V | Suitable for high voltage circuits|
| **Gate-source voltage (VGS)** | ±20V | Enhanced driving flexibility|
| **Turning threshold voltage (Vth)** | 3V | Minimum gate drive voltage|
| **On-resistance (RDS(ON))** | 7mΩ @ VGS=4.5V | Low on-resistance, suitable for high performance applications|
| | 2.5mΩ @ VGS=10V | Lower on-resistance at higher gate voltage|
| **Drain Current (ID)** | 270A | Maximum drain current for high power requirements|
| **Technology** | Trench | Provides low loss and high performance|
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Domain and module applications：
3. Application fields and module examples
1. **Switching mode power supply (SMPS)**
NP110N055PUJ-E1B-AY-VB is widely used in **switching mode power supply (SMPS)**, such as DC-DC converters and adapters. Its high current carrying capacity and low on-resistance make it ideal in high-efficiency power supply designs.
2. **Motor drive**
In **motor control** systems, this MOSFET can be used to control DC motors and stepper motors, providing fast switching response and high current support to ensure efficient system operation.
3. **Industrial automation**
NP110N055PUJ-E1B-AY-VB is suitable for **industrial control modules**, such as programmable logic controllers (PLCs) and industrial robots. The high current capability and reliability of this MOSFET make it the first choice for high-load applications.
4. **Battery Management System**
In **Battery Management System (BMS)**, the device can be used for battery charge and discharge control to ensure battery safety and efficiency. High on-current supports fast charging and discharging operations.
5. **Renewable Energy Applications**
In **Solar Inverters** and other renewable energy systems, NP110N055PUJ-E1B-AY-VB can be used for high-voltage DC-AC conversion to ensure high-efficiency conversion and improve the overall efficiency of the system.
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NP110N055PUJ-E1B-AY-VB is an ideal choice for high-efficiency power supply and motor drive with its excellent performance, flexible application and high current support. Its TO263 package not only ensures good heat dissipation performance, but also reduces design space, making it an indispensable component in modern electronic design.
1. **Switching mode power supply (SMPS)**
NP110N055PUJ-E1B-AY-VB is widely used in **switching mode power supply (SMPS)**, such as DC-DC converters and adapters. Its high current carrying capacity and low on-resistance make it ideal in high-efficiency power supply designs.
2. **Motor drive**
In **motor control** systems, this MOSFET can be used to control DC motors and stepper motors, providing fast switching response and high current support to ensure efficient system operation.
3. **Industrial automation**
NP110N055PUJ-E1B-AY-VB is suitable for **industrial control modules**, such as programmable logic controllers (PLCs) and industrial robots. The high current capability and reliability of this MOSFET make it the first choice for high-load applications.
4. **Battery Management System**
In **Battery Management System (BMS)**, the device can be used for battery charge and discharge control to ensure battery safety and efficiency. High on-current supports fast charging and discharging operations.
5. **Renewable Energy Applications**
In **Solar Inverters** and other renewable energy systems, NP110N055PUJ-E1B-AY-VB can be used for high-voltage DC-AC conversion to ensure high-efficiency conversion and improve the overall efficiency of the system.
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NP110N055PUJ-E1B-AY-VB is an ideal choice for high-efficiency power supply and motor drive with its excellent performance, flexible application and high current support. Its TO263 package not only ensures good heat dissipation performance, but also reduces design space, making it an indispensable component in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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