中文
English
NP110N055PUG-VB Product details
Back to previous pageProduct introduction：
1. NP110N055PUG-VB Product Introduction
NP110N055PUG-VB is a **single N-channel MOSFET** in a **TO-263 package**, designed to meet the needs of high current and high-efficiency power management. The device has a **maximum drain-source voltage (VDS)** of **60V**, supports **±20V** gate-source voltage (VGS), and has a 3V turn-on voltage (Vth). At **VGS = 10V**, its on-resistance (RDS(ON)) is only **2.5mΩ**, and at **VGS = 4.5V** it is **7mΩ**, making it have extremely low conduction losses in high current applications. The **continuous drain current (ID)** of this MOSFET is up to **270A**, suitable for high-power load applications. NP110N055PUG-VB features **Trench technology**, designed to achieve better thermal management and efficiency, making it ideal for a variety of power management and drive applications.
---
NP110N055PUG-VB is a **single N-channel MOSFET** in a **TO-263 package**, designed to meet the needs of high current and high-efficiency power management. The device has a **maximum drain-source voltage (VDS)** of **60V**, supports **±20V** gate-source voltage (VGS), and has a 3V turn-on voltage (Vth). At **VGS = 10V**, its on-resistance (RDS(ON)) is only **2.5mΩ**, and at **VGS = 4.5V** it is **7mΩ**, making it have extremely low conduction losses in high current applications. The **continuous drain current (ID)** of this MOSFET is up to **270A**, suitable for high-power load applications. NP110N055PUG-VB features **Trench technology**, designed to achieve better thermal management and efficiency, making it ideal for a variety of power management and drive applications.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | 2.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. NP110N055PUG-VB Detailed parameter description
| **Parameter** | **Description** | **Value** |
|-------------------------|----------------------------------------|----------------------|
| **Package** | TO-263 | Optimize heat dissipation performance|
| **Configuration** | Single N-channel MOSFET | High-efficiency design|
| **Drain-source voltage (VDS)** | Maximum withstand voltage| 60V |
| **Gate-source voltage (VGS)** | Gate withstand voltage| ±20V |
| **Throw-on voltage (Vth)** | Turn-on voltage| 3V |
| **On-resistance (RDS(ON))** | @ VGS = 4.5V | 7mΩ |
| | @ VGS = 10V | 2.5mΩ |
| **Maximum drain current (ID)** | Maximum continuous current| 270A |
| **Technology** | Trench Technology | Low Power, High Efficiency|
| **Operating Temperature Range** | Operating Temperature| -55°C to 175°C |
---
| **Parameter** | **Description** | **Value** |
|-------------------------|----------------------------------------|----------------------|
| **Package** | TO-263 | Optimize heat dissipation performance|
| **Configuration** | Single N-channel MOSFET | High-efficiency design|
| **Drain-source voltage (VDS)** | Maximum withstand voltage| 60V |
| **Gate-source voltage (VGS)** | Gate withstand voltage| ±20V |
| **Throw-on voltage (Vth)** | Turn-on voltage| 3V |
| **On-resistance (RDS(ON))** | @ VGS = 4.5V | 7mΩ |
| | @ VGS = 10V | 2.5mΩ |
| **Maximum drain current (ID)** | Maximum continuous current| 270A |
| **Technology** | Trench Technology | Low Power, High Efficiency|
| **Operating Temperature Range** | Operating Temperature| -55°C to 175°C |
---
Domain and module applications：
3. Application fields and module examples
1. **Electric vehicle charging system**
In **Electric vehicle charging stations**, NP110N055PUG-VB is used as a high-efficiency current switch that can handle large currents and ensure fast charging. At the same time, its low on-resistance can reduce energy loss during charging and improve charging efficiency.
2. **High-power power converter**
This MOSFET is suitable for **high-power switching power supply (SMPS)**. As the main switch in the converter module, it can support high power output while effectively reducing heat loss and improving the efficiency of the overall system.
3. **Industrial automation equipment**
NP110N055PUG-VB is widely used in **industrial automation control systems**. As the main switching element in the motor driver, it can efficiently drive various industrial motors to ensure high reliability and performance.
4. **Wind and Solar Systems**
In **renewable energy applications**, such as wind turbines and solar inverters, this MOSFET enables efficient current control, ensuring efficient energy conversion and reducing system losses.
5. **Power Management and Regulation**
NP110N055PUG-VB is also used in **power management modules (PMMs)**, which can effectively control the flow of power and support power management and regulation functions of various electronic devices.
---
NP110N055PUG-VB is a high-efficiency N-channel MOSFET designed for high-current applications, suitable for electric vehicles, industrial equipment, high-power power supplies and renewable energy. Its excellent performance and reliability make it an ideal choice for modern power management and drive modules.
1. **Electric vehicle charging system**
In **Electric vehicle charging stations**, NP110N055PUG-VB is used as a high-efficiency current switch that can handle large currents and ensure fast charging. At the same time, its low on-resistance can reduce energy loss during charging and improve charging efficiency.
2. **High-power power converter**
This MOSFET is suitable for **high-power switching power supply (SMPS)**. As the main switch in the converter module, it can support high power output while effectively reducing heat loss and improving the efficiency of the overall system.
3. **Industrial automation equipment**
NP110N055PUG-VB is widely used in **industrial automation control systems**. As the main switching element in the motor driver, it can efficiently drive various industrial motors to ensure high reliability and performance.
4. **Wind and Solar Systems**
In **renewable energy applications**, such as wind turbines and solar inverters, this MOSFET enables efficient current control, ensuring efficient energy conversion and reducing system losses.
5. **Power Management and Regulation**
NP110N055PUG-VB is also used in **power management modules (PMMs)**, which can effectively control the flow of power and support power management and regulation functions of various electronic devices.
---
NP110N055PUG-VB is a high-efficiency N-channel MOSFET designed for high-current applications, suitable for electric vehicles, industrial equipment, high-power power supplies and renewable energy. Its excellent performance and reliability make it an ideal choice for modern power management and drive modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
