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NP110N04PUJ-VB Product details

Product introduction:

NP110N04PUJ-VB Product Introduction

NP110N04PUJ-VB is a high-performance single N-channel MOSFET in a TO263 package, designed for high current and low voltage applications. The MOSFET features a maximum drain-source voltage (VDS) of up to 40V and a gate-source voltage (VGS) of ±20V, making it suitable for a variety of power management and switching applications. The NP110N04PUJ-VB has an extremely low on-resistance of 1.68mΩ (at VGS of 4.5V) and 1.4mΩ (at VGS of 10V), supporting a continuous drain current of up to 280A. With its superior performance, the NP110N04PUJ-VB plays a key role in efficient power conversion and current control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 40V 3V 280A 1.4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 40V 3V 280A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 40V 3V 280A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
NP110N04PUJ-VB Detailed parameter description

| **Parameter** | **Description** |
|------------------------|----------------------------------|
| **Model** | NP110N04PUJ-VB |
| **Package** | TO263 |
| **Configuration** | Single N-channel|
| **Maximum drain-source voltage (VDS)** | 40V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 1.68mΩ @ VGS=4.5V |
| | 1.4mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 280A |
| **Technology** | Trench |

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Domain and module applications:

Applications and module examples

1. **Power management system**:
NP110N04PUJ-VB is widely used in power management systems, such as DC-DC converters and AC-DC adapters, to provide efficient current switching, ensuring the stability and efficiency of power supply, especially in high-power applications.

2. **Electric vehicles and hybrid vehicles**:
In the battery management system of electric vehicles, this MOSFET can effectively control the charging and discharging process, support high current transmission, and improve the performance and service life of the battery.

3. **Motor drive**:
Suitable for various motor control systems, NP110N04PUJ-VB can be used as a drive switch for efficient control of brushless DC motors and stepper motors, improving the stability and efficiency of motor operation.

4. **Data center power module**:
In the power distribution module of the data center, the use of this MOSFET can optimize power switching and management, improve the efficiency of power transmission, and reduce power consumption and heat.

5. **Renewable energy systems**:
In solar inverters and wind power generation systems, NP110N04PUJ-VB can be used as a power switch to maximize energy conversion and management and improve the efficiency of renewable energy.

6. **Smart home devices**:
This MOSFET can also be used in smart home products such as smart sockets and lighting control systems to provide efficient current switching and enhance the intelligence and energy-saving performance of the equipment.

With its excellent current carrying capacity and low on-resistance, NP110N04PUJ-VB is an indispensable key component in modern power management and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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