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NP110N04PUJ-E2B-AY-VB Product details
Back to previous pageProduct introduction：
1. NP110N04PUJ-E2B-AY-VB Product Introduction
NP110N04PUJ-E2B-AY-VB is a high-performance **single N-channel MOSFET**, using **TO263 package**, designed for high-efficiency and high-power applications. The device has a maximum drain-source voltage (VDS) of **40V** and supports gate-source voltage (VGS) up to **±20V**, providing good operating flexibility. Its turn-on voltage (Vth) is **3V**, and it achieves low on-resistance (RDS(ON)) of **1.68mΩ** and **1.4mΩ** at VGS of 4.5V and 10V, respectively, greatly reducing power consumption and heat generation. The maximum drain current (ID) of this MOSFET can reach **280A**, making it perform well in various high-current applications. Based on the **Trench process**, NP110N04PUJ-E2B-AY-VB has excellent performance in switching speed, thermal management and energy efficiency, suitable for the requirements of modern power electronic systems.
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NP110N04PUJ-E2B-AY-VB is a high-performance **single N-channel MOSFET**, using **TO263 package**, designed for high-efficiency and high-power applications. The device has a maximum drain-source voltage (VDS) of **40V** and supports gate-source voltage (VGS) up to **±20V**, providing good operating flexibility. Its turn-on voltage (Vth) is **3V**, and it achieves low on-resistance (RDS(ON)) of **1.68mΩ** and **1.4mΩ** at VGS of 4.5V and 10V, respectively, greatly reducing power consumption and heat generation. The maximum drain current (ID) of this MOSFET can reach **280A**, making it perform well in various high-current applications. Based on the **Trench process**, NP110N04PUJ-E2B-AY-VB has excellent performance in switching speed, thermal management and energy efficiency, suitable for the requirements of modern power electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. NP110N04PUJ-E2B-AY-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------------|-----------------------|-------------------------------------------|
| **Package type** | TO263 | Suitable for surface mounting, good heat dissipation performance. |
| **MOSFET configuration** | Single N-channel | Suitable for high-efficiency switching applications. |
| **Drain-source voltage (VDS)** | 40V | Meet the needs of medium and high voltage applications. |
| **Gate-source voltage (VGS)** | ±20V | Supports flexible control voltage range. |
| **Turning voltage (Vth)** | 3V | Suitable for common drive voltages. |
| **On-resistance (RDS(ON))** | 1.68mΩ @ VGS=4.5V | Provides excellent performance at low drive voltages. |
| **On-resistance (RDS(ON))** | 1.4mΩ @ VGS=10V | Extremely low resistance ensures efficient operation of the system. |
| **Drain current (ID)** | 280A | Supports high current load, suitable for heavy-duty applications. |
| **Technology type** | Trench | Provides excellent switching performance and thermal management capabilities. |
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| **Parameter** | **Value** | **Description** |
|------------------------|-----------------------|-------------------------------------------|
| **Package type** | TO263 | Suitable for surface mounting, good heat dissipation performance. |
| **MOSFET configuration** | Single N-channel | Suitable for high-efficiency switching applications. |
| **Drain-source voltage (VDS)** | 40V | Meet the needs of medium and high voltage applications. |
| **Gate-source voltage (VGS)** | ±20V | Supports flexible control voltage range. |
| **Turning voltage (Vth)** | 3V | Suitable for common drive voltages. |
| **On-resistance (RDS(ON))** | 1.68mΩ @ VGS=4.5V | Provides excellent performance at low drive voltages. |
| **On-resistance (RDS(ON))** | 1.4mΩ @ VGS=10V | Extremely low resistance ensures efficient operation of the system. |
| **Drain current (ID)** | 280A | Supports high current load, suitable for heavy-duty applications. |
| **Technology type** | Trench | Provides excellent switching performance and thermal management capabilities. |
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Domain and module applications：
III. Application Fields and Module Examples
1. **Power Management Systems**:
NP110N04PUJ-E2B-AY-VB can be used in power management modules for efficient power conversion and distribution, ensuring high efficiency under dynamic load conditions. Its high current carrying capacity makes it excellent in high-power applications and suitable for high-efficiency power adapters and battery management systems.
2. **Electric Vehicles and Hybrid Vehicles (EV and HEV)**:
In electric vehicles and hybrid vehicles, this MOSFET can be used for motor drive and energy recovery systems. Its ultra-low on-resistance ensures high efficiency and reliability at high currents, helping to improve overall energy efficiency.
3. **DC-DC Converters**:
NP110N04PUJ-E2B-AY-VB is an ideal choice for DC-DC converters, with outstanding performance in conversion efficiency and thermal management. It can be widely used in power modules for portable devices, computer power supplies, and industrial equipment.
4. **Charging piles and photovoltaic inverters**:
This MOSFET can be used in power conversion modules for electric vehicle charging piles and photovoltaic inverters, supporting high-current energy management, ensuring efficient energy transmission and conversion, and contributing to the utilization of renewable energy.
5. **Motor control and drive**:
In industrial automation and robotics applications, NP110N04PUJ-E2B-AY-VB can be used in motor drive systems to provide precise control and efficient energy conversion, ensuring system flexibility and efficiency.
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NP110N04PUJ-E2B-AY-VB is a high-performance N-channel MOSFET that is widely used in power management systems, electric vehicles, DC-DC converters, charging piles, and motor control. Its excellent performance ensures stability and efficient operation in various complex environments, and is an indispensable key component in modern power electronic equipment.
1. **Power Management Systems**:
NP110N04PUJ-E2B-AY-VB can be used in power management modules for efficient power conversion and distribution, ensuring high efficiency under dynamic load conditions. Its high current carrying capacity makes it excellent in high-power applications and suitable for high-efficiency power adapters and battery management systems.
2. **Electric Vehicles and Hybrid Vehicles (EV and HEV)**:
In electric vehicles and hybrid vehicles, this MOSFET can be used for motor drive and energy recovery systems. Its ultra-low on-resistance ensures high efficiency and reliability at high currents, helping to improve overall energy efficiency.
3. **DC-DC Converters**:
NP110N04PUJ-E2B-AY-VB is an ideal choice for DC-DC converters, with outstanding performance in conversion efficiency and thermal management. It can be widely used in power modules for portable devices, computer power supplies, and industrial equipment.
4. **Charging piles and photovoltaic inverters**:
This MOSFET can be used in power conversion modules for electric vehicle charging piles and photovoltaic inverters, supporting high-current energy management, ensuring efficient energy transmission and conversion, and contributing to the utilization of renewable energy.
5. **Motor control and drive**:
In industrial automation and robotics applications, NP110N04PUJ-E2B-AY-VB can be used in motor drive systems to provide precise control and efficient energy conversion, ensuring system flexibility and efficiency.
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NP110N04PUJ-E2B-AY-VB is a high-performance N-channel MOSFET that is widely used in power management systems, electric vehicles, DC-DC converters, charging piles, and motor control. Its excellent performance ensures stability and efficient operation in various complex environments, and is an indispensable key component in modern power electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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