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NP110N04PUJ-E1B-AY-VB Product details
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1. NP110N04PUJ-E1B-AY-VB Product Introduction
NP110N04PUJ-E1B-AY-VB is a **high-performance N-channel power MOSFET**, using **TO263 package**, designed for applications requiring high current and low conduction loss. Its **drain-source voltage (VDS)** is **40V**, suitable for a wide range of power management and drive applications. The **gate-source voltage (VGS)** of this device is **±20V**, with good compatibility. Its **turn-on threshold voltage (Vth)** is **3V**, ensuring reliable conduction under a variety of driving conditions. The **on resistance (RDS(ON))** of NP110N04PUJ-E1B-AY-VB is 1.68mΩ** at **VGS=4.5V**, and drops to 1.4mΩ** at **VGS=10V**, significantly reducing power loss and improving system efficiency. The maximum **drain current (ID)** can reach **280A**, providing strong support for high-power loads. Based on **Trench technology**, this MOSFET excels in switching speed and thermal management, and is suitable for high-efficiency power systems, automotive electronics, and industrial automation equipment.
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NP110N04PUJ-E1B-AY-VB is a **high-performance N-channel power MOSFET**, using **TO263 package**, designed for applications requiring high current and low conduction loss. Its **drain-source voltage (VDS)** is **40V**, suitable for a wide range of power management and drive applications. The **gate-source voltage (VGS)** of this device is **±20V**, with good compatibility. Its **turn-on threshold voltage (Vth)** is **3V**, ensuring reliable conduction under a variety of driving conditions. The **on resistance (RDS(ON))** of NP110N04PUJ-E1B-AY-VB is 1.68mΩ** at **VGS=4.5V**, and drops to 1.4mΩ** at **VGS=10V**, significantly reducing power loss and improving system efficiency. The maximum **drain current (ID)** can reach **280A**, providing strong support for high-power loads. Based on **Trench technology**, this MOSFET excels in switching speed and thermal management, and is suitable for high-efficiency power systems, automotive electronics, and industrial automation equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description
| **Parameter name** | **Parameter value** | **Description** |
|-----------------------|--------------------------|----------------------------------|
| **Package type** | TO263 | Compact package suitable for surface mounting|
| **Configuration** | Single N-channel | Unipolar design for forward conduction|
| **Drain-source voltage (VDS)** | 40V | Suitable for medium and low voltage circuits and power systems|
| **Gate-source voltage (VGS)** | ±20V | Provides a wide range of driving voltages|
| **Turn-on threshold voltage (Vth)** | 3V | Reliably conducts at voltages above 3V|
| **On-resistance (RDS(ON))** | 1.68mΩ @ VGS=4.5V | Resistance value at lower gate voltage|
| **On-resistance (RDS(ON))** | 1.4mΩ @ VGS=10V | Resistance value at higher gate voltage|
| **Drain current (ID)** | 280A | Supports high current load|
| **Process technology** | Trench | Provides low loss and fast switching characteristics|
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| **Parameter name** | **Parameter value** | **Description** |
|-----------------------|--------------------------|----------------------------------|
| **Package type** | TO263 | Compact package suitable for surface mounting|
| **Configuration** | Single N-channel | Unipolar design for forward conduction|
| **Drain-source voltage (VDS)** | 40V | Suitable for medium and low voltage circuits and power systems|
| **Gate-source voltage (VGS)** | ±20V | Provides a wide range of driving voltages|
| **Turn-on threshold voltage (Vth)** | 3V | Reliably conducts at voltages above 3V|
| **On-resistance (RDS(ON))** | 1.68mΩ @ VGS=4.5V | Resistance value at lower gate voltage|
| **On-resistance (RDS(ON))** | 1.4mΩ @ VGS=10V | Resistance value at higher gate voltage|
| **Drain current (ID)** | 280A | Supports high current load|
| **Process technology** | Trench | Provides low loss and fast switching characteristics|
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Domain and module applications：
3. Application fields and module examples
1. **High-efficiency power converters**
The application of NP110N04PUJ-E1B-AY-VB in **power converters** can significantly improve conversion efficiency and reduce energy loss, and is suitable for **switching power supplies (SMPS)** and **DC-DC converters**.
2. **Electric vehicles and hybrid vehicles**
In the power systems of **electric vehicles (EV)** and **hybrid vehicles (HEV)**, this MOSFET can be used for battery management and motor drive, supporting high current and fast response, and optimizing energy use.
3. **Industrial automation equipment**
This MOSFET is very suitable for control systems in **industrial automation**, such as **servo motor controllers and inverters**, to ensure efficient power transmission and control.
4. **LED Driver**
NP110N04PUJ-E1B-AY-VB can achieve precise current control in **LED driver**, ensuring the stability and life of LED, especially in high-power LED lighting applications.
5. **Solar Inverter**
In **Solar Inverter** system, this device can be used for DC to AC energy conversion, improving overall energy efficiency and ensuring stable operation in different environments.
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1. **High-efficiency power converters**
The application of NP110N04PUJ-E1B-AY-VB in **power converters** can significantly improve conversion efficiency and reduce energy loss, and is suitable for **switching power supplies (SMPS)** and **DC-DC converters**.
2. **Electric vehicles and hybrid vehicles**
In the power systems of **electric vehicles (EV)** and **hybrid vehicles (HEV)**, this MOSFET can be used for battery management and motor drive, supporting high current and fast response, and optimizing energy use.
3. **Industrial automation equipment**
This MOSFET is very suitable for control systems in **industrial automation**, such as **servo motor controllers and inverters**, to ensure efficient power transmission and control.
4. **LED Driver**
NP110N04PUJ-E1B-AY-VB can achieve precise current control in **LED driver**, ensuring the stability and life of LED, especially in high-power LED lighting applications.
5. **Solar Inverter**
In **Solar Inverter** system, this device can be used for DC to AC energy conversion, improving overall energy efficiency and ensuring stable operation in different environments.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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