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NP110N04PDG-VB Product details
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NP110N04PDG-VB Product Introduction
The NP110N04PDG-VB is a high-efficiency single N-channel MOSFET in a TO263 package designed for high current applications. With a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, the device is suitable for power management in a variety of electronic devices. Its threshold voltage (Vth) is 3V, ensuring that it switches quickly at higher gate voltages. The on-resistance (RDS(ON)) of the NP110N04PDG-VB is very low, at 1.68mΩ at a VGS of 4.5V, decreasing to 1.4mΩ at a VGS of 10V, thereby minimizing power consumption and heat generation. With a maximum drain current (ID) of up to 280A, this MOSFET is suitable for high-performance applications that need to handle high currents.
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The NP110N04PDG-VB is a high-efficiency single N-channel MOSFET in a TO263 package designed for high current applications. With a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, the device is suitable for power management in a variety of electronic devices. Its threshold voltage (Vth) is 3V, ensuring that it switches quickly at higher gate voltages. The on-resistance (RDS(ON)) of the NP110N04PDG-VB is very low, at 1.68mΩ at a VGS of 4.5V, decreasing to 1.4mΩ at a VGS of 10V, thereby minimizing power consumption and heat generation. With a maximum drain current (ID) of up to 280A, this MOSFET is suitable for high-performance applications that need to handle high currents.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
NP110N04PDG-VB Detailed Parameter Description
| Parameter| Value|
|--------------------|-----------------------------|
| **Model** | NP110N04PDG-VB |
| **Package** | TO263 |
| **Configuration** | Single N-channel|
| **Drain-Source Voltage(VDS)** | 40V |
| **Gate-Source Voltage(VGS)** | 20（±V） |
| **Threshold Voltage(Vth)** | 3V |
| **On-Resistance(RDS(ON))** | 1.68mΩ @ VGS=4.5V
1.4mΩ @ VGS=10V |
| **Drain Current(ID)** | 280A |
| **Technology** | Trench |
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| Parameter| Value|
|--------------------|-----------------------------|
| **Model** | NP110N04PDG-VB |
| **Package** | TO263 |
| **Configuration** | Single N-channel|
| **Drain-Source Voltage(VDS)** | 40V |
| **Gate-Source Voltage(VGS)** | 20（±V） |
| **Threshold Voltage(Vth)** | 3V |
| **On-Resistance(RDS(ON))** | 1.68mΩ @ VGS=4.5V
1.4mΩ @ VGS=10V |
| **Drain Current(ID)** | 280A |
| **Technology** | Trench |
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Domain and module applications：
Applications and modules
**NP110N04PDG-VB** is suitable for multiple applications and modules that require high current and high efficiency, as follows:
1. **Electric vehicles and hybrid vehicles**
In the power management system of electric vehicles and hybrid vehicles, this MOSFET can be used in battery management modules and motor control to provide efficient current transmission and improve overall energy efficiency.
2. **High-power switching power supply**
NP110N04PDG-VB is very suitable for high-power switching power supply design. It can be used as the main switching element in the DC-DC converter to reduce energy loss and improve conversion efficiency with extremely low on-resistance.
3. **Data center power module**
This MOSFET can be used in the power management system of the data center to ensure stability and reliability under high current load conditions, and is suitable for high-efficiency server power management.
4. **Industrial Automation Equipment**
In the field of industrial automation, this MOSFET can be used for motor drive and load control, providing fast switching and high current carrying capacity to meet the needs of modern manufacturing systems for precise control.
5. **LED Lighting Driver Circuit**
NP110N04PDG-VB can be used in high-power LED driver circuits as a switching element to effectively control the power supply and ensure efficient lighting solutions, especially in lighting applications that require high brightness and long life.
Due to its ultra-low on-resistance and high current capability, NP110N04PDG-VB performs well in a variety of applications and is an important choice for modern electronic design that pursues high efficiency and high reliability.
**NP110N04PDG-VB** is suitable for multiple applications and modules that require high current and high efficiency, as follows:
1. **Electric vehicles and hybrid vehicles**
In the power management system of electric vehicles and hybrid vehicles, this MOSFET can be used in battery management modules and motor control to provide efficient current transmission and improve overall energy efficiency.
2. **High-power switching power supply**
NP110N04PDG-VB is very suitable for high-power switching power supply design. It can be used as the main switching element in the DC-DC converter to reduce energy loss and improve conversion efficiency with extremely low on-resistance.
3. **Data center power module**
This MOSFET can be used in the power management system of the data center to ensure stability and reliability under high current load conditions, and is suitable for high-efficiency server power management.
4. **Industrial Automation Equipment**
In the field of industrial automation, this MOSFET can be used for motor drive and load control, providing fast switching and high current carrying capacity to meet the needs of modern manufacturing systems for precise control.
5. **LED Lighting Driver Circuit**
NP110N04PDG-VB can be used in high-power LED driver circuits as a switching element to effectively control the power supply and ensure efficient lighting solutions, especially in lighting applications that require high brightness and long life.
Due to its ultra-low on-resistance and high current capability, NP110N04PDG-VB performs well in a variety of applications and is an important choice for modern electronic design that pursues high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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