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NP110N03PUG-VB Product details
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1. NP110N03PUG-VB Product Introduction
NP110N03PUG-VB is a high-performance **N-channel power MOSFET**, using **TO263** package, designed for power management and load control that require high current and high efficiency. Its **drain-source voltage (VDS)** is up to **30V**, and supports a maximum **gate-source voltage (VGS)** of ±20V, adapting to harsh industrial and consumer electronics environments. With a **turn-on voltage (Vth)** of 1.7V and an **on-resistance (RDS(ON))** of only **2.3mΩ** at **VGS=10V**, the device has extremely low conduction losses and excellent thermal management performance. Trench technology (**Trench Technology**) further improves the conduction efficiency, making it excellent in high-current applications, with a maximum continuous drain current (**ID**) of up to **150A**. This device is very suitable for switching power supplies, load switches, motor control and power distribution applications.
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NP110N03PUG-VB is a high-performance **N-channel power MOSFET**, using **TO263** package, designed for power management and load control that require high current and high efficiency. Its **drain-source voltage (VDS)** is up to **30V**, and supports a maximum **gate-source voltage (VGS)** of ±20V, adapting to harsh industrial and consumer electronics environments. With a **turn-on voltage (Vth)** of 1.7V and an **on-resistance (RDS(ON))** of only **2.3mΩ** at **VGS=10V**, the device has extremely low conduction losses and excellent thermal management performance. Trench technology (**Trench Technology**) further improves the conduction efficiency, making it excellent in high-current applications, with a maximum continuous drain current (**ID**) of up to **150A**. This device is very suitable for switching power supplies, load switches, motor control and power distribution applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. NP110N03PUG-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-----------------------|--------------------------|----------------------------------------------------|
| **Package** | TO263 | SMD package suitable for high-power applications with good heat dissipation characteristics. |
| **Configuration** | Single-N-Channel | Single N-channel MOSFET, supporting a variety of power management and load control applications. |
| **Drain-Source Voltage (VDS)** | 30V | Maximum drain-source voltage, suitable for low-voltage application environments. |
| **Gate-Source Voltage (VGS)** | ±20V | Maximum gate voltage, adapting to the design requirements of different control circuits. |
| **Turning Voltage (Vth)** | 1.7V | Moderate threshold voltage to ensure reliable conduction in low-voltage systems. |
| **On-resistance (RDS(ON))** | 3.2mΩ @ VGS=4.5V | On-resistance at 4.5V gate voltage, suitable for medium current load applications. |
| | 2.3mΩ @ VGS=10V | On-resistance at 10V gate voltage, supports high current applications. |
| **Drain current (ID)** | 150A | Supports high current transmission, suitable for high power applications. |
| **Technology** | Trench | Trench technology provides high efficiency, low loss and good thermal management. |
| **Operating temperature range** | -55°C ~ +150°C | Supports wide temperature working environment, suitable for industrial and outdoor applications. |
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| **Parameter** | **Value** | **Description** |
|-----------------------|--------------------------|----------------------------------------------------|
| **Package** | TO263 | SMD package suitable for high-power applications with good heat dissipation characteristics. |
| **Configuration** | Single-N-Channel | Single N-channel MOSFET, supporting a variety of power management and load control applications. |
| **Drain-Source Voltage (VDS)** | 30V | Maximum drain-source voltage, suitable for low-voltage application environments. |
| **Gate-Source Voltage (VGS)** | ±20V | Maximum gate voltage, adapting to the design requirements of different control circuits. |
| **Turning Voltage (Vth)** | 1.7V | Moderate threshold voltage to ensure reliable conduction in low-voltage systems. |
| **On-resistance (RDS(ON))** | 3.2mΩ @ VGS=4.5V | On-resistance at 4.5V gate voltage, suitable for medium current load applications. |
| | 2.3mΩ @ VGS=10V | On-resistance at 10V gate voltage, supports high current applications. |
| **Drain current (ID)** | 150A | Supports high current transmission, suitable for high power applications. |
| **Technology** | Trench | Trench technology provides high efficiency, low loss and good thermal management. |
| **Operating temperature range** | -55°C ~ +150°C | Supports wide temperature working environment, suitable for industrial and outdoor applications. |
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Domain and module applications：
3. Application Fields and Module Examples
1. **Switching Power Supply**
In the field of power management, NP110N03PUG-VB can be used as an efficient main switch device to provide fast switching and low energy consumption solutions for **AC-DC** and **DC-DC** converters.
**Example:** Used in notebook adapters and server power supplies to improve conversion efficiency and reduce power consumption.
2. **Motor Control**
This MOSFET is capable of driving large currents in motors, providing precise power regulation and switching control.
**Example:** In the drive modules of **power tools** and **electric vehicles**, efficient operation of brushless DC motors (BLDC) is achieved.
3. **Load Switching**
Its high current capability and low on-resistance make it an ideal load switch in power path control.
**Example:** In **industrial automation equipment**, it is used to control and switch different power paths to ensure stable operation of the system.
4. **Battery Management System (BMS)**
In the battery management system, this MOSFET can be used to control the charge and discharge paths to ensure efficient and safe energy transmission.
**Example:** In **electric vehicles** and **energy storage devices**, it is used for charge and discharge management of battery packs.
5. **Power Distribution Module**
NP110N03PUG-VB is an efficient power distribution module suitable for power distribution systems, supporting dynamic management of multiple loads in the system.
**Example:** In **data centers**, it is used for dynamic power scheduling to ensure efficient and stable operation of equipment.
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NP110N03PUG-VB is a high-performance N-channel power MOSFET, which is widely used in power management, motor control and load switching fields due to its low conduction loss, high current capability and excellent thermal management performance. Its TO263 package and trench technology enable it to meet the needs of modern electronic systems for high efficiency and reliability.
1. **Switching Power Supply**
In the field of power management, NP110N03PUG-VB can be used as an efficient main switch device to provide fast switching and low energy consumption solutions for **AC-DC** and **DC-DC** converters.
**Example:** Used in notebook adapters and server power supplies to improve conversion efficiency and reduce power consumption.
2. **Motor Control**
This MOSFET is capable of driving large currents in motors, providing precise power regulation and switching control.
**Example:** In the drive modules of **power tools** and **electric vehicles**, efficient operation of brushless DC motors (BLDC) is achieved.
3. **Load Switching**
Its high current capability and low on-resistance make it an ideal load switch in power path control.
**Example:** In **industrial automation equipment**, it is used to control and switch different power paths to ensure stable operation of the system.
4. **Battery Management System (BMS)**
In the battery management system, this MOSFET can be used to control the charge and discharge paths to ensure efficient and safe energy transmission.
**Example:** In **electric vehicles** and **energy storage devices**, it is used for charge and discharge management of battery packs.
5. **Power Distribution Module**
NP110N03PUG-VB is an efficient power distribution module suitable for power distribution systems, supporting dynamic management of multiple loads in the system.
**Example:** In **data centers**, it is used for dynamic power scheduling to ensure efficient and stable operation of equipment.
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NP110N03PUG-VB is a high-performance N-channel power MOSFET, which is widely used in power management, motor control and load switching fields due to its low conduction loss, high current capability and excellent thermal management performance. Its TO263 package and trench technology enable it to meet the needs of modern electronic systems for high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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