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NP10N65CF-VB Product details
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1. NP10N65CF-VB Product Introduction
NP10N65CF-VB is a single N-channel MOSFET in TO220F package, designed for high-voltage and high-efficiency applications. Its maximum drain-source voltage (V\(_{DS}\)) is 650V, and the gate voltage (V\(_{GS}\)) range is ±30V, which is suitable for high-voltage circuit environments. Its threshold voltage (V\(_{th}\)) is 3.5V, and it can be stably turned on at a higher gate voltage. The device has an on-resistance (R\(_{DS(on)}\)) of 830mΩ (V\(_{GS}\) = 10V) and supports a drain current of up to 10A.
Designed with a planar process, the NP10N65CF-VB excels in providing good current control and reliability, and is an ideal device for various high-voltage power conversion and switch control circuits.
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NP10N65CF-VB is a single N-channel MOSFET in TO220F package, designed for high-voltage and high-efficiency applications. Its maximum drain-source voltage (V\(_{DS}\)) is 650V, and the gate voltage (V\(_{GS}\)) range is ±30V, which is suitable for high-voltage circuit environments. Its threshold voltage (V\(_{th}\)) is 3.5V, and it can be stably turned on at a higher gate voltage. The device has an on-resistance (R\(_{DS(on)}\)) of 830mΩ (V\(_{GS}\) = 10V) and supports a drain current of up to 10A.
Designed with a planar process, the NP10N65CF-VB excels in providing good current control and reliability, and is an ideal device for various high-voltage power conversion and switch control circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. NP10N65CF-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-----------------------------|------------------------------|-----------------------------------|
| **Package type** | TO220F | Standard package with good heat dissipation capability|
| **Configuration** | Single N-channel | Suitable for unidirectional current switching|
| **V\(_{DS}\)** | 650V | Maximum voltage between drain and source|
| **V\(_{GS}\)** | ±30V | Maximum voltage between gate and source|
| **V\(_{th}\)** | 3.5V | Threshold voltage|
| **R\(_{DS(on)}\)** | 830mΩ @ V\(_{GS}\)=10V | On-resistance|
| **I\(_D\)** | 10A | Maximum continuous drain current|
| **Technology** | Planar process (Plannar) | Provides high voltage tolerance and reliability|
| **Operating temperature range** | -55°C ~ 150°C | Adapt to harsh environments|
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| **Parameter** | **Value** | **Description** |
|-----------------------------|------------------------------|-----------------------------------|
| **Package type** | TO220F | Standard package with good heat dissipation capability|
| **Configuration** | Single N-channel | Suitable for unidirectional current switching|
| **V\(_{DS}\)** | 650V | Maximum voltage between drain and source|
| **V\(_{GS}\)** | ±30V | Maximum voltage between gate and source|
| **V\(_{th}\)** | 3.5V | Threshold voltage|
| **R\(_{DS(on)}\)** | 830mΩ @ V\(_{GS}\)=10V | On-resistance|
| **I\(_D\)** | 10A | Maximum continuous drain current|
| **Technology** | Planar process (Plannar) | Provides high voltage tolerance and reliability|
| **Operating temperature range** | -55°C ~ 150°C | Adapt to harsh environments|
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Domain and module applications：
3. Applicable fields and module applications
1. **High-voltage power conversion module**
NP10N65CF-VB is very suitable for high-voltage power conversion modules such as AC-DC converters and power inverters. Its high withstand voltage of 650V ensures stable operation in industrial power and grid power applications, reduces power loss and improves system efficiency.
2. **Switch mode power supply (SMPS)**
In high-frequency switch mode power supply design, this MOSFET can be used as a high-voltage switch. Its Plannar structure enables it to maintain stable conduction under high voltage conditions and reduce switching losses. It is suitable for computer power supplies, LED drivers and adapters.
3. **Electric vehicles and battery management systems**
NP10N65CF-VB is suitable for battery management systems (BMS) and charging modules in new energy vehicles. Its high voltage and high reliability characteristics ensure safe and stable control during battery charging and voltage monitoring.
4. **Industrial Equipment and Motor Control**
This MOSFET is also widely used in motor drive modules and industrial control equipment, such as fan controllers, industrial heating systems and other scenarios. Its high voltage resistance and heat dissipation capabilities enable it to operate stably and for a long time in harsh environments.
5. **Photovoltaic Inverter and Energy Management System**
In photovoltaic systems, this device can be used for energy conversion and inverter modules. The 650V voltage resistance of NP10N65CF-VB ensures safe operation during energy conversion and meets the requirements of high efficiency and high stability in solar applications.
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In summary, NP10N65CF-VB is a high-performance, high-reliability MOSFET, especially suitable for power conversion and control applications that require high voltage resistance and high current handling capabilities. It has a wide range of application value in fields such as industrial equipment, automotive electronics and renewable energy systems, providing designers with a reliable high-voltage solution.
1. **High-voltage power conversion module**
NP10N65CF-VB is very suitable for high-voltage power conversion modules such as AC-DC converters and power inverters. Its high withstand voltage of 650V ensures stable operation in industrial power and grid power applications, reduces power loss and improves system efficiency.
2. **Switch mode power supply (SMPS)**
In high-frequency switch mode power supply design, this MOSFET can be used as a high-voltage switch. Its Plannar structure enables it to maintain stable conduction under high voltage conditions and reduce switching losses. It is suitable for computer power supplies, LED drivers and adapters.
3. **Electric vehicles and battery management systems**
NP10N65CF-VB is suitable for battery management systems (BMS) and charging modules in new energy vehicles. Its high voltage and high reliability characteristics ensure safe and stable control during battery charging and voltage monitoring.
4. **Industrial Equipment and Motor Control**
This MOSFET is also widely used in motor drive modules and industrial control equipment, such as fan controllers, industrial heating systems and other scenarios. Its high voltage resistance and heat dissipation capabilities enable it to operate stably and for a long time in harsh environments.
5. **Photovoltaic Inverter and Energy Management System**
In photovoltaic systems, this device can be used for energy conversion and inverter modules. The 650V voltage resistance of NP10N65CF-VB ensures safe operation during energy conversion and meets the requirements of high efficiency and high stability in solar applications.
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In summary, NP10N65CF-VB is a high-performance, high-reliability MOSFET, especially suitable for power conversion and control applications that require high voltage resistance and high current handling capabilities. It has a wide range of application value in fields such as industrial equipment, automotive electronics and renewable energy systems, providing designers with a reliable high-voltage solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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