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NP109N055PUK-VB Product details
Back to previous pageProduct introduction：
1. NP109N055PUK-VB Product Introduction
NP109N055PUK-VB is a **single N-channel MOSFET**, using **TO-263 package**, designed for high current applications and efficient power management. The device has a **maximum drain-source voltage (VDS)** of **60V**, supports a **maximum gate-source voltage (VGS) of **±20V**, and has a turn-on voltage (Vth) of 3V. Its on-resistance (RDS(ON)) is only **2.5mΩ** at **VGS = 10V**, and **7mΩ** at **VGS = 4.5V**, allowing it to maintain extremely low conduction losses at extremely high currents. Its **continuous drain current (ID)** is as high as **270A**, meeting the needs of high-power load applications. NP109N055PUK-VB adopts **Trench technology**, with excellent conduction efficiency and thermal management capabilities, it is an ideal choice for a variety of high-efficiency conversion and drive applications.
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NP109N055PUK-VB is a **single N-channel MOSFET**, using **TO-263 package**, designed for high current applications and efficient power management. The device has a **maximum drain-source voltage (VDS)** of **60V**, supports a **maximum gate-source voltage (VGS) of **±20V**, and has a turn-on voltage (Vth) of 3V. Its on-resistance (RDS(ON)) is only **2.5mΩ** at **VGS = 10V**, and **7mΩ** at **VGS = 4.5V**, allowing it to maintain extremely low conduction losses at extremely high currents. Its **continuous drain current (ID)** is as high as **270A**, meeting the needs of high-power load applications. NP109N055PUK-VB adopts **Trench technology**, with excellent conduction efficiency and thermal management capabilities, it is an ideal choice for a variety of high-efficiency conversion and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | 2.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. NP109N055PUK-VB Detailed parameter description
| **Parameter** | **Description** | **Value** |
|-------------------------|----------------------------------------|----------------------|
| **Package** | TO-263 | Optimize heat dissipation performance|
| **Configuration** | Single N-channel MOSFET | High-efficiency design|
| **Drain-source voltage (VDS)** | Maximum withstand voltage| 60V |
| **Gate-source voltage (VGS)** | Gate withstand voltage| ±20V |
| **Throw-on voltage (Vth)** | Turn-on voltage| 3V |
| **On-resistance (RDS(ON))** | @ VGS = 4.5V | 7mΩ |
| | @ VGS = 10V | 2.5mΩ |
| **Maximum drain current (ID)** | Maximum continuous current| 270A |
| **Technology** | Trench Technology | Low Power, High Efficiency|
| **Operating Temperature Range** | Operating Temperature| -55°C to 175°C |
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| **Parameter** | **Description** | **Value** |
|-------------------------|----------------------------------------|----------------------|
| **Package** | TO-263 | Optimize heat dissipation performance|
| **Configuration** | Single N-channel MOSFET | High-efficiency design|
| **Drain-source voltage (VDS)** | Maximum withstand voltage| 60V |
| **Gate-source voltage (VGS)** | Gate withstand voltage| ±20V |
| **Throw-on voltage (Vth)** | Turn-on voltage| 3V |
| **On-resistance (RDS(ON))** | @ VGS = 4.5V | 7mΩ |
| | @ VGS = 10V | 2.5mΩ |
| **Maximum drain current (ID)** | Maximum continuous current| 270A |
| **Technology** | Trench Technology | Low Power, High Efficiency|
| **Operating Temperature Range** | Operating Temperature| -55°C to 175°C |
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Domain and module applications：
III. Application fields and module examples
1. **Electric vehicle drive system**
In **Electric vehicles (EV)**, NP109N055PUK-VB is commonly used in motor drivers and battery management systems. Its high current carrying capacity and low conduction loss can effectively improve system efficiency and support fast charging and high-power drive.
2. **Data center power management**
This MOSFET is widely used in server and UPS power systems in **Data centers**. It can efficiently manage high-power loads, reduce energy consumption and ensure system stability.
3. **Industrial inverter**
NP109N055PUK-VB is suitable for **Industrial inverter** and is used as the main power switch element in the motor control module. Its high performance can reduce energy consumption and improve system reliability.
4. **Solar Inverter**
In **Solar Photovoltaic System**, this MOSFET can be used as a key switching element in the inverter to ensure efficient conversion of energy from DC to AC and reduce power loss.
5. **High Power Switch Mode Power Supply (SMPS)**
NP109N055PUK-VB is also suitable for **high power switch mode power supply**. Its high current capability and low on-resistance can ensure stable operation of the power module under high load conditions and improve system energy efficiency.
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NP109N055PUK-VB is an excellent N-channel MOSFET designed for high power and high current applications, suitable for electric vehicles, data centers, industrial control, solar energy systems and other fields. Its high performance and reliability make it a key component in modern power management and drive modules.
1. **Electric vehicle drive system**
In **Electric vehicles (EV)**, NP109N055PUK-VB is commonly used in motor drivers and battery management systems. Its high current carrying capacity and low conduction loss can effectively improve system efficiency and support fast charging and high-power drive.
2. **Data center power management**
This MOSFET is widely used in server and UPS power systems in **Data centers**. It can efficiently manage high-power loads, reduce energy consumption and ensure system stability.
3. **Industrial inverter**
NP109N055PUK-VB is suitable for **Industrial inverter** and is used as the main power switch element in the motor control module. Its high performance can reduce energy consumption and improve system reliability.
4. **Solar Inverter**
In **Solar Photovoltaic System**, this MOSFET can be used as a key switching element in the inverter to ensure efficient conversion of energy from DC to AC and reduce power loss.
5. **High Power Switch Mode Power Supply (SMPS)**
NP109N055PUK-VB is also suitable for **high power switch mode power supply**. Its high current capability and low on-resistance can ensure stable operation of the power module under high load conditions and improve system energy efficiency.
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NP109N055PUK-VB is an excellent N-channel MOSFET designed for high power and high current applications, suitable for electric vehicles, data centers, industrial control, solar energy systems and other fields. Its high performance and reliability make it a key component in modern power management and drive modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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