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NP109N055PUJ-E2B-AY-VB Product details

Product introduction:

NP109N055PUJ-E2B-AY-VB Product Introduction

NP109N055PUJ-E2B-AY-VB is a high-performance single N-channel MOSFET in TO263 package and designed based on Trench technology, optimized for low on-resistance and high current applications. Its maximum drain-source voltage (VDS) is 60V and the gate voltage (VGS) is rated at ±20V, which can cope with stringent switching current requirements. The MOSFET has extremely low on-resistance at different gate voltages (RDS(ON) is 12mΩ@VGS=4.5V, 3.2mΩ@VGS=10V) and supports up to 210A of continuous drain current. This makes it an ideal choice for high current power supply and load switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 3V 210A 3.2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 3V 210A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 3V 210A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
NP109N055PUJ-E2B-AY-VB Detailed parameter description

| **Parameter** | **Description** |
|------------------------|----------------------------------|
| **Model** | NP109N055PUJ-E2B-AY-VB |
| **Package** | TO263 |
| **Configuration** | Single N-channel|
| **Maximum drain-source voltage (VDS)** | 60V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 12mΩ @ VGS=4.5V |
| | 3.2mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 210A |
| **Technology** | Trench |

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Domain and module applications:

Application fields and module examples

1. **Electric vehicles and battery management systems**:
NP109N055PUJ-E2B-AY-VB can be used for switch control and protection of battery packs in battery management systems for electric vehicles (EV) and hybrid electric vehicles (HEV), supporting large current rapid charging and discharging to ensure system safety and stability.

2. **Power distribution module for servers and data centers**:
In efficient power management systems for servers and data centers, this MOSFET can be used as a load switch to achieve stable transmission of high currents and reduce power consumption and heat generation.

3. **DC-DC Converter**:
This MOSFET is suitable for high current DC-DC step-down converters, which can optimize the conversion efficiency of high power systems and is widely used in industrial automation equipment and communication base stations.

4. **Motor control systems**:
In various motor drive circuits (such as brushless DC motors and stepper motors), NP109N055PUJ-E2B-AY-VB provides stable current control and low-loss switching to support high-performance motor operation.

5. **UPS (uninterruptible power supply) systems**:
High-power modules in UPS systems require stable high-current MOSFETs to achieve load transfer and battery management, ensuring fast response and reliable operation of the system during power outages.

6. **Home and industrial inverters**:
In inverter systems, this MOSFET can effectively handle high-current loads, providing reliable power solutions for home and industrial applications, improving energy efficiency and extending system life.

With its high current carrying capacity, low on-resistance and Trench technology, NP109N055PUJ-E2B-AY-VB is an ideal component in high-power and high-efficiency power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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