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NP109N055PUJ-E1B-AY-VB Product details
Back to previous pageProduct introduction：
1. NP109N055PUJ-E1B-AY-VB Product Introduction
NP109N055PUJ-E1B-AY-VB is a high-performance **single N-channel MOSFET** in **TO263 package**, suitable for applications requiring high current and high efficiency. The device has a maximum drain-source voltage (VDS) of **60V** and supports a gate-source voltage (VGS) of up to **±20V**, ensuring reliable operation under various operating conditions. Its turn-on voltage (Vth) is **3V**, and it provides extremely low on-resistance (RDS(ON)) of **12mΩ** and **3.2mΩ** at VGS of 4.5V and 10V, respectively, thereby minimizing losses. The maximum drain current (ID) of this MOSFET reaches **210A**, making it very suitable for applications requiring high current control. Based on the **Trench process**, the device excels in switching speed, energy efficiency and thermal management, making it an ideal choice for high-power applications.
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NP109N055PUJ-E1B-AY-VB is a high-performance **single N-channel MOSFET** in **TO263 package**, suitable for applications requiring high current and high efficiency. The device has a maximum drain-source voltage (VDS) of **60V** and supports a gate-source voltage (VGS) of up to **±20V**, ensuring reliable operation under various operating conditions. Its turn-on voltage (Vth) is **3V**, and it provides extremely low on-resistance (RDS(ON)) of **12mΩ** and **3.2mΩ** at VGS of 4.5V and 10V, respectively, thereby minimizing losses. The maximum drain current (ID) of this MOSFET reaches **210A**, making it very suitable for applications requiring high current control. Based on the **Trench process**, the device excels in switching speed, energy efficiency and thermal management, making it an ideal choice for high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. NP109N055PUJ-E1B-AY-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------------|-----------------------|-------------------------------------------|
| **Package type** | TO263 | Supports surface mounting, good heat dissipation, suitable for high power applications. |
| **MOSFET configuration** | Single N-channel | Suitable for high-speed switching and high-current control. |
| **Drain-source voltage (VDS)** | 60V | Meets the needs of high-voltage applications. |
| **Gate-source voltage (VGS)** | ±20V | Supports a wider control voltage range to ensure flexibility. |
| **Turn-on voltage (Vth)** | 3V | Turns on effectively at higher drive voltages. |
| **On-resistance (RDS(ON))** | 12mΩ @ VGS=4.5V | Provides good performance at low drive voltages and reduces losses. |
| **On-resistance (RDS(ON))** | 3.2mΩ @ VGS=10V | Very low resistance improves system efficiency and reduces heat generation. |
| **Drain current (ID)** | 210A | Supports high current load, suitable for heavy-duty applications. |
| **Technology type** | Trench | Provides excellent switching performance and thermal management capabilities. |
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| **Parameter** | **Value** | **Description** |
|------------------------|-----------------------|-------------------------------------------|
| **Package type** | TO263 | Supports surface mounting, good heat dissipation, suitable for high power applications. |
| **MOSFET configuration** | Single N-channel | Suitable for high-speed switching and high-current control. |
| **Drain-source voltage (VDS)** | 60V | Meets the needs of high-voltage applications. |
| **Gate-source voltage (VGS)** | ±20V | Supports a wider control voltage range to ensure flexibility. |
| **Turn-on voltage (Vth)** | 3V | Turns on effectively at higher drive voltages. |
| **On-resistance (RDS(ON))** | 12mΩ @ VGS=4.5V | Provides good performance at low drive voltages and reduces losses. |
| **On-resistance (RDS(ON))** | 3.2mΩ @ VGS=10V | Very low resistance improves system efficiency and reduces heat generation. |
| **Drain current (ID)** | 210A | Supports high current load, suitable for heavy-duty applications. |
| **Technology type** | Trench | Provides excellent switching performance and thermal management capabilities. |
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Domain and module applications：
III. Application fields and module examples
1. **Battery Management System (BMS)**:
In electric vehicles and energy storage systems, NP109N055PUJ-E1B-AY-VB can be used for **battery pack management** to control the battery charging and discharging process. Its high current capability and low on-resistance ensure that the system operates efficiently and reduces energy loss.
2. **DC-DC Converters**:
This MOSFET plays a key role in high-power **DC-DC conversion modules**, especially in applications that require high conversion efficiency. Its low on-resistance reduces losses during the conversion process, thereby improving system efficiency.
3. **Motor Drive**:
NP109N055PUJ-E1B-AY-VB is an ideal choice for high-current **motor drives** and can be used for motor control in industrial automation equipment, power tools, and electric vehicles. The high current capability of 210A ensures that it can effectively drive high-power motors.
4. **PV inverters and charging piles**:
In PV systems and **EV charging piles**, the device can be used in inverter modules to achieve efficient energy conversion and management, and ensure stable operation of the system under high current.
5. **Industrial control systems**:
In control modules of industrial equipment, NP109N055PUJ-E1B-AY-VB can achieve high-speed switching and efficient power management. Its high current and high voltage performance enable it to maintain reliable operation in harsh industrial environments.
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NP109N055PUJ-E1B-AY-VB is a high-current, high-efficiency N-channel MOSFET that is widely used in battery management systems, DC-DC converters, motor drives, PV inverters, and industrial control. Its excellent performance ensures stability and efficient operation in complex environments, and is an indispensable device for high-power applications.
1. **Battery Management System (BMS)**:
In electric vehicles and energy storage systems, NP109N055PUJ-E1B-AY-VB can be used for **battery pack management** to control the battery charging and discharging process. Its high current capability and low on-resistance ensure that the system operates efficiently and reduces energy loss.
2. **DC-DC Converters**:
This MOSFET plays a key role in high-power **DC-DC conversion modules**, especially in applications that require high conversion efficiency. Its low on-resistance reduces losses during the conversion process, thereby improving system efficiency.
3. **Motor Drive**:
NP109N055PUJ-E1B-AY-VB is an ideal choice for high-current **motor drives** and can be used for motor control in industrial automation equipment, power tools, and electric vehicles. The high current capability of 210A ensures that it can effectively drive high-power motors.
4. **PV inverters and charging piles**:
In PV systems and **EV charging piles**, the device can be used in inverter modules to achieve efficient energy conversion and management, and ensure stable operation of the system under high current.
5. **Industrial control systems**:
In control modules of industrial equipment, NP109N055PUJ-E1B-AY-VB can achieve high-speed switching and efficient power management. Its high current and high voltage performance enable it to maintain reliable operation in harsh industrial environments.
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NP109N055PUJ-E1B-AY-VB is a high-current, high-efficiency N-channel MOSFET that is widely used in battery management systems, DC-DC converters, motor drives, PV inverters, and industrial control. Its excellent performance ensures stability and efficient operation in complex environments, and is an indispensable device for high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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